CP structure magnetic random access memory and information reading method thereof
A random access memory, magnetic technology, applied in digital memory information, static memory, information storage and other directions, can solve problems such as energy waste, and achieve the effect of ensuring accuracy and improving storage density
Inactive Publication Date: 2010-09-29
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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However, this method not only needs to add two decoding and decoding switches for each word line and bit line, but also causes waste of energy.
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[0022] A magnetic random access memory of CP architecture, such as Figure 4 As shown, it includes two magnetic random access memory arrays with the same CP architecture and a comparator. The magnetic random access memory array of the CP structure is composed of M rows of word lines, N columns of bit lines, and M×N magnetic tunnel junction information storage units connected between the word lines and the bit lines, and each row of word lines passes through a code The code switch is grounded. One of the magnetic random access memory arrays of the CP structure is the main magnetic random access memory array A1, which is used for reading and writing information; the other magnetic random access memory array of the CP structure is the reference magnetic random access memory array A2; the reference magnetic random access memory array A2 is all magnetic The information stored in the tunnel junction information storage unit is known. Each column bit line of the main magnetic random ...
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The invention relates to a CP structure magnetic random access memory and an information reading method thereof, which belong to the field of magnetic materials and devices. The CP structure magnetic random access memory comprises two identical CP structure magnetic random access memory arrays and a comparator, wherein one array is a main magnetic random access memory array A1, the other array isa reference magnetic random access memory array A2 with known storage information, each bit line of A1 is respectively connected with one input end of the comparator through a coding and decoding switch, and each bit line of A2 is respectively connected with the other input end of the comparator through a coding and decoding switch. During information reading, whether the information of a readingunit in the main magnetic random access memory array A1 conforms to the information stored in a corresponding storage unit in the reference magnetic random access memory array A2 or not is judged according to the value of the output level of the comparator to read the information. The invention can eliminate the influence of leakage current on the premise of unchanged storage density, and the reading accuracy of the information of the storage unit can be ensured.
Description
Technical field [0001] The invention belongs to the field of magnetic materials and components, and relates to a magnetic random access memory (Magnetic Random Access Memory, MRAM), in particular to a cross-point (CP) framework MRAM and an information reading method thereof. Background technique [0002] Magnetic Random Access Memory (MRAM) is a device that realizes digital information storage based on the giant magnetoresistance effect. MRAM is composed of information storage units distributed in an array. Each information storage unit is a magnetic tunnel junction. Its basic structure is as follows figure 1 As shown, it includes a bias layer, a ferromagnetic layer F2, a tunneling layer, and a ferromagnetic layer F1. Under the action of an external magnetic field, the magnetic tunnel junction can achieve the same and opposite magnetic moment directions of the ferromagnetic layer F2 and the ferromagnetic layer F1: when the magnetic moment directions of the ferromagnetic layer F2 ...
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Login to View More IPC IPC(8): G11C7/06G11C11/16
CPCG11C11/1653G11C11/1673G11C11/1675
Inventor 唐晓莉张怀武荆玉兰苏桦钟智勇
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA