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Lithographic projection apparatus and method of compensating perturbation factors

A technology of lithography projection and equipment, applied in the direction of microlithography exposure equipment, optomechanical equipment, optics, etc., can solve the problems of underexposure, overexposure, dose influence, etc.

Inactive Publication Date: 2010-09-29
ASML NETHERLANDS BV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

These sources of perturbation can lead to overexposure, i.e. too high a dose for a particular type of structure (e.g. dense patterns), and underexposure, i.e. too low a dose for a different type of structure (e.g. separated features)
Many systematic perturbations can have an effect on the dose over a long range, i.e. they affect the substrate over a distance of more than 1mm on the substrate to be exposed

Method used

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  • Lithographic projection apparatus and method of compensating perturbation factors
  • Lithographic projection apparatus and method of compensating perturbation factors
  • Lithographic projection apparatus and method of compensating perturbation factors

Examples

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Embodiment Construction

[0035] figure 1 A lithographic apparatus according to an embodiment of the present invention is schematically shown. The equipment includes:

[0036] - an illumination system (illuminator) IL configured to condition a radiation beam PB (eg, ultraviolet (UV) radiation or extreme ultraviolet (EUV) radiation);

[0037] - a support structure (eg mask table) MT configured to support the patterning device (eg mask) MA and connected to first positioning means PM configured to precisely position the patterning device according to determined parameters;

[0038] - a substrate table (e.g. a wafer table) WT configured to hold a substrate (e.g. a resist-coated wafer) W and associated with a second positioner PW configured to precisely position the substrate according to determined parameters connected; and

[0039] - a projection system (e.g. a refractive projection lens system) PL configured to project the pattern imparted to the radiation beam PB by the patterning device MA onto a ta...

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Abstract

A lithographic apparatus is disclosed that has a support structure (MT), a projection system (PL) and a system configured to compensate for perturbation factors (AES). The support structure (MT) is configured to support a patterning device (MA), the patterning device (MA) being configured to impart a beam of radiation with a pattern in its cross-section. The projection system (PL) is configured to expose the patterned beam of radiation on a target portion of a substrate (W). The system is configured to compensate perturbation factors by providing an additional beam of radiation (IL') to be exposed on a target portion of the substrate (W). The additional beam of radiation (IL') is imparted in its cross-section with an additional pattern based on the pattern of the patterning device and on lithographic projection apparatus property data. The lithographic projection apparatus property data characterizes a level and nature of one or more systematic perturbation factors of a lithographic projection apparatus, e.g. a stray radiation profile or a source power spectrum.

Description

[0001] Cross References to Related Applications [0002] This application claims the benefit of US Provisional Application 60 / 996,277, filed November 8, 2007, which is hereby incorporated by reference in its entirety. technical field [0003] The present invention relates to a lithographic projection apparatus and a method of device fabrication using the same, as well as a computer-readable medium containing computer-executable code enabling such a device fabrication method. The present invention also relates to a method of compensating for disturbance factors in a lithographic projection apparatus and a computer-readable medium comprising computer-executable code enabling such a method of compensating for disturbance factors. Background technique [0004] A lithographic apparatus is a machine that applies a desired pattern to a substrate, usually to a target portion of the substrate. For example, lithographic equipment may be used in the manufacture of integrated circuits ...

Claims

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Application Information

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IPC IPC(8): G03F7/20
CPCG03F7/70208G03F7/70291G03F7/70941
Inventor J·B·P·范斯库特D·J·马阿斯A·J·J·范帝杰赛欧东克H·范德兰
Owner ASML NETHERLANDS BV
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