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Illumination system of a microlithographic projection exposure apparatus

A lighting system and microlithography technology, applied in the field of lighting systems, can solve problems such as uneven distribution of residual polarization, and achieve the effect of avoiding complications and costs

Active Publication Date: 2010-10-13
CARL ZEISS SMT GMBH
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

[0005] In this regard, it has been found that those effects lead to an inhomogeneous distribution of the residual polarization

Method used

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  • Illumination system of a microlithographic projection exposure apparatus
  • Illumination system of a microlithographic projection exposure apparatus
  • Illumination system of a microlithographic projection exposure apparatus

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Embodiment Construction

[0032] The following will first refer to figure 1 The principle on which the invention is based, which is used to generate light without a preferred polarization direction in the image plane of a projection exposure apparatus, is described.

[0033] on this side, figure 1 is a greatly simplified schematic diagram showing a reticle (or mask) 30 with a structure to be projected, the reticle being arranged in a projection objective 40 (symbolically only with two lenses L 1 and L 2 Indicates in the object plane OP. A substrate (or wafer) 50 provided with a photosensitive layer is arranged in the image plane IP of the projection objective 40 .

[0034] figure 1 Also shown are two light beams 10 and 20, which come from the illumination system ( figure 1 not shown in ) and meet in the object plane OP of the projection objective 40, the structures of the beams 10, 20 on the reticle 30 are diffracted. In this respect it is assumed that the structure 30 (at least in particular) co...

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Abstract

The invention concerns an illumination system of a microlithographic projection exposure apparatus, wherein the illumination system (200, 700) in operation of the projection exposure apparatus illuminates an object plane (OP) of a projection objective (40) of the projection exposure apparatus, and wherein the illumination system (200, 700) is so adapted that light components (10, 20) in point-symmetrical relationship with each other, which are produced in operation of the illumination system and which are only superposed in the object plane (OP) have mutually orthogonal polarization states.

Description

technical field [0001] The invention relates to an illumination system of a projection exposure apparatus for microlithography. Background technique [0002] Microlithography is used to produce microstructured components, such as integrated circuits or LCDs. The microlithography process is carried out in what is known as a projection exposure apparatus, which has an illumination system and a projection objective. In this case, the image of the mask (= reticle) illuminated by means of an illumination system is projected by means of a projection objective onto a substrate coated with a photosensitive layer (photoresist) and arranged on the image plane of the projection objective (e.g. a silicon wafer) in order to transfer the mask structure to the photosensitive coating on the substrate. [0003] In projection exposure equipment for many purposes it is desirable that the light generated is as unpolarized as possible. For this purpose, it is known from eg DE 198 29 612 A1 th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/20
CPCG03F7/70191G03F7/70566G03F7/70091G03F7/20H01L21/027
Inventor 达米安·菲奥尔卡弗拉丹·布拉尼克
Owner CARL ZEISS SMT GMBH
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