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Improved 800type silicon monocrystalline furnace thermal field system

A technology of silicon single crystal and furnace thermal field, which is applied in the direction of single crystal growth, single crystal growth, crystal growth, etc., can solve the problems affecting the utilization efficiency of silicon materials and the performance of finished solar cells, so as to improve efficiency and reduce unit energy Consumption, improve the effect of utilization

Inactive Publication Date: 2012-02-29
ZHEJIANG XINNENG PHOTOVOLTAIC TECH CO LTD
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AI Technical Summary

Problems solved by technology

The diameter of the monocrystalline silicon rod will directly affect the efficiency of the finished solar cell and the utilization efficiency of the silicon material

Method used

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  • Improved 800type silicon monocrystalline furnace thermal field system
  • Improved 800type silicon monocrystalline furnace thermal field system
  • Improved 800type silicon monocrystalline furnace thermal field system

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Embodiment Construction

[0020] The original 800 type silicon single crystal furnace thermal field system such as figure 1 As shown, it includes a heater 1, a crucible 2, an inner guide cylinder 3, an outer guide cylinder 4, an upper insulation cylinder 5, a middle insulation cylinder 6, a lower insulation cylinder 7, an upper insulation cover 9, a lower insulation cover 10, an insulation Layer 24, crucible support 14, support rod shaft 16 and support rod shaft seat 15, support rod sheath 17, upper pressing piece 18, lower pressing piece 19, graphite electrode 20 and electrode sheath 21, electrode screw 22 and electrode screw cover twenty three. The dimensions of the main components of the original 800-type silicon single crystal furnace thermal field system are as follows: the outer diameter and height of the upper insulation cylinder 5 are 630mm×178mm, the outer diameter and height of the middle insulation cylinder 6 are 630mm×540mm, the outer diameter and height of the lower insulation cylinder...

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Abstract

The invention relates to an improving method of a silicon monocrystalline furnace thermal field system, which improves and designs a silicon monocrystalline furnace which is commonly used in the prior art and is implemented under the premise of maintaining the structure of a traditional furnace chamber. The improving method comprises the following steps that: increasing the diameter of a heat insulating tube and a heater, increasing the diameter and the height of a crucible, increasing the diameter and the height of a draft tube, correspondingly increasing the diameter and the thickness of a crucible support and adjusting the size of a support post and the diameter and the height of a graphite electrode; a heat insulating layer adopts a carbon fiber solid felt and is divided into an upperheat insulating casing, a middle heat insulating casing and a lower heat insulating casing; and a retaining ring is arranged above a heat insulating cover. The improving method of the silicon monocrystalline furnace thermal field system can increase the fed amount of the silicon monocrystalline furnace, increase the diameter and / or the length of a produced monocrystalline silicon rod so as to improve the efficiency of a finished solar cell, improve the utilization rate of silicon material, reduce the unit energy consumption, improve the production efficiency and reduce the production cost.

Description

technical field [0001] The invention belongs to the technical field of green energy solar cells, and in particular relates to an improved thermal field system of an 800-type silicon single crystal furnace for preparing single crystal silicon rods. The monocrystalline silicon rods are used to prepare monocrystalline silicon wafers for solar cells. Background technique [0002] Solar energy is an inexhaustible green energy source. Solar cells are the main components of solar photovoltaic power generation systems, and monocrystalline silicon solar cells are currently the fastest growing type of solar cells. The quality of monocrystalline silicon wafers directly affects the quality of monocrystalline silicon solar cells, and improving the quality of monocrystalline silicon wafers is a prerequisite for the production of high-efficiency solar cells. At present, the traditional Czochralski growth method is commonly used at home and abroad to produce monocrystalline silicon, which...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B15/00C30B29/06
Inventor 屠勇勇李金甫
Owner ZHEJIANG XINNENG PHOTOVOLTAIC TECH CO LTD
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