Method for filling deep trench

A filling method and deep groove technology, applied in the direction of gaseous chemical plating, coating, electrical components, etc., can solve the problems of large tensile stress, small yield strength, long production cycle, etc., to prevent cracking, small tensile Effect of stress, good hole filling performance

Active Publication Date: 2010-11-17
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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Problems solved by technology

However, for deep trenches, due to the inherent bottom-up growth mechanism of HDP CVD, the production cycle is longer and the cost is higher
Orthoethyl silicate (TEOS)-ozone (O 3 )-based CVD has good step coverage and low deposition temperature, and is widely used in pre-metal dielectric film deposition (PMD) and inter-metal dielectric film deposition (IMD), but due to its large tensile Stress and small yield strength limit its application in grooved structures

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  • Method for filling deep trench

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Embodiment Construction

[0010] The invention provides a deep trench filling method. When filling the deep trench, first deposit a first layer of compressive stress film, and then use TEOS-O 3 The second layer of tensile stress film is deposited on the basis of AP / SA CVD, thereby completing the filling of the deep trench, and obtaining the deep trench structure as shown in the figure.

[0011] After the first layer of compressive stress film is deposited, an etch-back process is performed, and then TEOS-O is used 3 Based on AP / SA CVD, a second layer of tensile stress film is deposited.

[0012] The invention combines the good step coverage of TEOS base and the characteristics of low pressure CVD (LPCVD) compressive stress, and adopts the stacked structure of LPCVD and AP / SA CVD (atmospheric pressure / sub-atmospheric pressure CVD) film to improve the film stress while at the same time. The trench can be filled better, and in order to achieve better filling performance, an etch-back process can be added betwee...

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Abstract

The invention discloses a method for filling a deep trench, which comprises the following steps: when the deep trench is filled, firstly depositing a first compression stress film layer, and then depositing a second tensile stress film layer using TEOS-O3-based AP/SA CVD to complete filling of the deep trench. In the invention, by adopting deposition of films with different performances for twice, the method for filling the deep trench achieves good step coverage and good pore filling performance, and the filling films have smaller tensile strength to prevent generating defects or cracks in the films or on the interface.

Description

Technical field [0001] The invention relates to a semiconductor process method, in particular to a deep trench filling method. Background technique [0002] At present, for shallow trenches with high aspect ratio, high-density plasma chemical vapor deposition (HDP CVD) is usually used. However, for deep trenches, due to the inherent bottom-up growth mechanism of HDP CVD, the production cycle is longer and the cost is higher. Ethyl orthosilicate (TEOS)-ozone (O 3 )-Based CVD has good step coverage and low deposition temperature. It is widely used in pre-metal dielectric film deposition (PMD) and inter-metal dielectric film deposition (IMD), but due to its larger stretch The stress and low yield strength limit its application in trench structures. Summary of the invention [0003] The technical problem to be solved by the present invention is to provide a deep trench filling method, so that the trench filling not only has good step coverage to achieve good hole filling performance...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/312H01L21/311H01L21/316C23C16/44
Inventor 缪燕谢烜季伟彭虎
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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