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Cleaning composition for thick film resist

A cleaning agent and photoresist technology, applied in the field of cleaning agents, can solve problems such as insufficient cleaning ability

Inactive Publication Date: 2012-08-22
ANJI MICROELECTRONICS (SHANGHAI) CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0010] The problem to be solved by the present invention is to provide a cleaning agent for thick film photoresist in order to overcome the defects of existing thick film photoresist cleaning agent or insufficient cleaning ability, or strong corrosion to semiconductor wafer patterns and substrates. Highly capable photoresist cleaner with low corrosiveness to semiconductor wafer substrates and patterns

Method used

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  • Cleaning composition for thick film resist
  • Cleaning composition for thick film resist
  • Cleaning composition for thick film resist

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1~25

[0027] Table 1 shows cleaning agent examples 1-25 of the present invention, and each cleaning agent can be prepared by simply and uniformly mixing each component according to the formula in the table.

[0028] Table 1 cleaning agent embodiment 1~25 of the present invention

[0029]

[0030]

[0031]

[0032]

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PUM

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Abstract

A cleaning composition for removing thick film resist includes dimethylsulfoxide, potassium hydroxide, anolamines, aromatic alkyl alcohol and / or its derivatives and polycarboxylic acid compounds. The cleaning composition may clean more 100mu m thickness resist on a metal, metal alloy and dielectric substrate effectively.

Description

technical field [0001] The invention relates to a cleaning agent in a semiconductor manufacturing process, in particular to a thick-film photoresist cleaning agent. technical background [0002] In the usual semiconductor manufacturing process, a photoresist mask is formed on the surface of metals such as silicon dioxide, Cu (copper), and low-k materials, and pattern transfer is performed by wet or dry etching after exposure. Thick-film photoresists with a thickness of more than 100 μm are increasingly used in semiconductor wafer manufacturing processes, so cleaning agents for thick-film photoresists have increasingly become an important research direction for semiconductor wafer manufacturing processes. In particular, thick-film negative photoresists with a thickness of more than 100 μm are gradually being used in the semiconductor wafer manufacturing process, but most of the photoresist cleaners in the industry cannot completely remove the cross-linked particles on the waf...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/42H01L21/02C23G1/06C11D1/66
CPCC11D7/06G03F7/425G03F7/426C11D7/261C11D7/265C11D7/5009C11D11/0047C11D2111/22
Inventor 彭洪修刘兵
Owner ANJI MICROELECTRONICS (SHANGHAI) CO LTD