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Photoelectric element

A technology of photoelectric components and electrodes, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., and can solve the problems of poor luminous efficiency and uneven current distribution of photoelectric components 100

Active Publication Date: 2010-12-29
EPISTAR CORP
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

[0005] Not only that, it is known that when the photoelectric element 100 is in operation, the current is introduced into the semiconductor stack 12 by the electrode 14. However, since most of the current flows through the semiconductor stack 12 through the smallest path, the current distribution in the semiconductor stack 12 is not uniform. situation, also makes the luminous efficiency of the photoelectric element 100 not good

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Embodiment Construction

[0035] The present invention discloses a photoelectric element. In order to make the description of the present invention more detailed and complete, please refer to the following description and cooperate with Figure 3 to Figure 5 icon of the .

[0036] image 3 It is a structural schematic diagram of an embodiment of the present invention, such as image 3 As shown, the photoelectric element 300 includes a semiconductor stack 30, wherein the semiconductor stack 30 has a first main surface 302 and a second main surface 304; a first transparent conductive oxide layer 32 is located on the first main surface 302 or the second main surface 304; in this embodiment, the first transparent conductive oxide layer 32 is located on the first main surface 302; and the second transparent conductive oxide layer 34 covers the above-mentioned first transparent conductive oxide layer 32 and is formed substantially parallel to the first The plane of the main surface 302 or the second main s...

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Abstract

The invention discloses a photoelectric element which comprises a semiconductor overlapped layer, a first transparent conducting oxide layer and a second transparent conducting oxide layer, wherein the first transparent conducting oxide layer is located on the semiconductor overlapped layer and is provided with at least one opening; and the second transparent conducting oxide layer covers the first transparent conducting oxide layer. In addition, the second transparent conducting oxide layer is filled in the opening of the first transparent conducting oxide layer and is in contact with the semiconductor overlapped layer, and any one of the first transparent conducting oxide layer and the second transparent conducting oxide layer is in ohmic contact with the semiconductor overlapped layer.

Description

technical field [0001] The invention relates to a photoelectric element, in particular to a photoelectric element with a first transparent conductive oxide layer and a second transparent conductive oxide layer. Background technique [0002] The light-emitting diode (light-emitting diode, LED) uses the energy difference between n-type semiconductors and p-type semiconductors to release energy in the form of light. This light-emitting principle is different from that of incandescent lamps. Principle, so light-emitting diodes are called cold light sources. In addition, light-emitting diodes have the advantages of high durability, long life, light weight, and low power consumption. Therefore, today's lighting market places high hopes on light-emitting diodes and regards them as a new generation of lighting tools. [0003] figure 1 It is a schematic diagram of a known photoelectric element structure, such as figure 1 As shown, the known light-emitting element 100 includes a su...

Claims

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Application Information

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IPC IPC(8): H01L33/00
Inventor 谢明勋王健源姚久琳林锦源
Owner EPISTAR CORP