Electrostatic discharge safeguard structure in integrated circuit

Abstract

The invention relates to an electrostatic discharge safeguard structure in an integrated circuit, which comprises a first-class electrostatic discharge safeguard component and a second-class electrostatic discharge safeguard component, wherein the first-class electrostatic discharge safeguard component is a diode; the second-class electrostatic discharge safeguard component is a subsection doublestage transistor with a Zener diode; the subsection doublestage transistor with the Zener diode comprises a subsection doublestage transistor, an emitter series resistor, a collector series resistor, a base resistor and the Zener diode; the electrostatic discharge safeguard structure of the integrated circuit provides electrostatic discharge safeguard for an input buffer, an output buffer, a powertrajectory and a ground trajectory; and the electrostatic discharge safeguard component utilizes a subsection doublestage transistor structure in a domain territory and a fictive poly gate structure in each section doublestage transistor to form a series resistor of the Zener diode with low trigger voltage, an emitter and a collector. The invention effectively enhances the electrostatic dischargesafeguard capability of the integrated circuit, reduces the trigger voltage of an electrostatic discharge safeguard circuit, enhances the uniform continuity of the electrostatic discharge safeguard component and effectively saves the domain territory area of the electrostatic discharge safeguard component.

Description

technical field [0001] The invention relates to an electrostatic discharge protection structure, in particular to a structure for improving the electrostatic discharge protection effect through circuit and layout design, and belongs to the technical field of electrostatic protection of integrated circuits. Background technique [0002] Electrostatic discharge is one of the most important reliability issues in CMOS integrated circuits today. With the rapid development of ultra-large-scale integrated circuit technology, the feature size has entered the deep submicron stage, which greatly improves the performance and operation speed of integrated circuits. However, the reduction of device size has greatly increased the sensitivity of the device to external electromagnetic interference, making the harm of electrostatic discharge to the reliability of the device more and more significant. [0003] On the other hand, as the signal transmission speed of integrated circuits increas...

AI Technical Summary

Problems solved by technology

With the reduction of the feature size of integrated circuits, CMOS devices need to occupy a large chip area as an electrostatic discharge protection device, and have the disadvantage of non-uniform conduction

As an electrostatic discharge protection device, a thyristor device has a high trigger voltage and may cause latch-up, which is difficult to design and implement.

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