Three-dimensional structure microelectrode applied to mini-super capacitor and manufacturing method thereof

Abstract

The invention discloses an MEMES technology-based three-dimensional structure microelectrode applied to a mini-super capacitor and a manufacturing method thereof. In the three-dimensional structure microelectrode, a nickel microcolumn array is vertically arranged on one side face of a nickel substrate and a functional thin film is coated on the surface of the nickel microcolumn. The manufacturing method for the three-dimensional structure microelectrode comprises steps of coating a layer of epoxy group negative chemically amplified SU-8 glue film on the surface of the nickel substrate and performing photolithography; and preparing the nickel microcolumn array, and performing functional thin film electro-deposition treatment. The area of the microelectrode can be effectively increased and the electrical properties of the functional thin film are improved, so that the charge storage ability of the microelectrode is improved and the impedance of the microelectrode is reduced. The microelectrode-based mini-super capacitor is widely applied in the fields, such as a sensor network node power supply, a fuze power supply and the like.

Description

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AI Technical Summary

Benefits of technology

This patented technology uses 3D structures made up from regular microspheres that are arranged into layers instead of just one layer on top. These special shapes help improve their performance by storing more charges compared with traditional 2D designs.

Problems solved by technology

This patented technical problem addressed in this patent relates to improving the efficiency and effectiveness of small electronics that integrate multiple components onto an ASIC substrate while minimizing their overall dimensions. These smaller sizes require larger amounts of current than previous designs due to limitations like longer charging times required during battery recharges. However, there currently exist only limited ways to achieve these goals without increasing its own weight and volume. Therefore, it becomes necessary to develop new solutions to enhance the capacitances within the device itself.

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