Columnar capacitor, stacking-type coaxial columnar capacitor and preparation method thereof

A capacitor and columnar technology, applied in the field of capacitors, can solve the problems of increasing the circuit area and achieve the effect of low cost and simple process

Active Publication Date: 2010-03-17
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] The capacitors used in circuit design are usually flat capacitors, which are formed by sandwiching an insulating medium between two layers of metal. In order to increase the capacitance of the flat capacitor, it is usually necessary to increase the area of ​​the metal plate or reduce the thickness of the die

Method used

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  • Columnar capacitor, stacking-type coaxial columnar capacitor and preparation method thereof
  • Columnar capacitor, stacking-type coaxial columnar capacitor and preparation method thereof
  • Columnar capacitor, stacking-type coaxial columnar capacitor and preparation method thereof

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Embodiment Construction

[0026] Such as figure 1 As shown, the columnar capacitor of the present invention is formed in the process of preparing through holes and connections between different metal layers. The columnar capacitor includes a dielectric layer 3, wherein a central through hole 1 and at least one through hole 1 connected to the center are provided. The coaxial annular columnar through-hole 2 , the central through-hole 1 and the annular columnar through-hole 2 are respectively filled with metal to form metal regions, and adjacent metal regions are not connected.

[0027] Please refer to figure 2 with image 3 , the preparation method of the above-mentioned coaxial columnar capacitor is implemented in the process of preparing through holes and wiring between different metal layers, including the following steps:

[0028] (1) Deposit a dielectric layer, and through exposure and development on the dielectric layer (the material of the dielectric layer can be an oxide, such as silicon dioxi...

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Abstract

The invention discloses a columnar capacitor formed between different metal layers in the technique for preparing through-holes and wiring. The columnar capacitor comprises a dielectric layer, wherein, a central through-hole and at least one cylindrical through-hole coaxial with the central through-hole are formed in the dielectric layer; the central through-hole and the cylindrical through holesare filled with metal respectively, so as to form metal areas respectively, wherein, the adjacent metal areas are not communicated with each other. The invention further discloses a stacking-type coaxial columnar capacitor and a method for preparing the capacitors. The capacitors of the invention have the following advantages: 1, the preparation of the capacitors are formed in the process of preparing metal wiring, so that the technique is simple and the cost is low; and 2, the capacitors are free from the design dimensionality in the height direction through coaxial stacking preparation, so that the capacitors can be prepared flexibly according to the spatial requirements for circuit components, and according to component simulation, the capacitance of a stacking-type capacitor with the height of 4 mu m is equivalent to that of a plate capacitor, being about 1fF/mu m<2>.

Description

technical field [0001] The invention relates to a capacitor, in particular to a columnar capacitor and a stacked coaxial columnar capacitor. The present invention also relates to a method of manufacturing the above capacitor. Background technique [0002] The capacitors used in circuit design are usually flat capacitors, which are formed by sandwiching an insulating medium between two layers of metal. In order to increase the capacitance of the flat capacitor, it is usually necessary to increase the area of ​​the metal plate or reduce the thickness of the dielectric layer. Thickness, and these measures will have various restrictions in actual implementation, such as increasing the area will increase the area of ​​the entire circuit, and the thickness of the dielectric layer is limited by the process level, so the capacitance of the plate capacitor is usually 1fF / um 2 . [0003] From the above it can be seen that in the manufacture of electronics and integrated circuits, th...

Claims

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Application Information

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IPC IPC(8): H01G4/00H01G4/38H01L29/92H01L21/02
Inventor 吴小利许丹
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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