Quaternary vertical light-emitting diode (LED) with current blocking structure and preparation method thereof

Abstract

The invention relates to a quaternary vertical light-emitting diode (LED) with a current blocking structure and a preparation method thereof. In the quaternary vertical LED with the current blocking structure, a distributed Bragg reflecting layer is formed on a substrate; a first type epitaxial layer is formed on the distributed Bragg reflecting layer; a light-emitting layer is formed on the first type epitaxial layer; a second type epitaxial layer is formed on the light-emitting layer; a graphical (GaP) window layer of a concave-surface crosswise extending bar is formed on the second type epitaxial layer; a first electrode is formed over the GaP window layer; the first electrode and the GaP window layer have a hollow current blocking structure; and a second electrode is formed at the back of the substrate. After the conventional process is finished, the first electrode and the GaP window layer are formed into the hollow current blocking structure using air as a medium, so that the direction of the current from the light-emitting layer to a surface extending layer is changed, much more current are extended from the periphery of the GaP window layer and then converged to the electrodes, and the light-emitting efficiency of the LED is increased by 30 to 50 percent compared with that of the LED adopting the known technique.

Description

technical field [0001] The invention relates to a quaternary system vertical light emitting diode, in particular to a quaternary system vertical light emitting diode with a current blocking structure and a preparation method thereof. Background technique [0002] At present, light-emitting diodes have been widely used in display, decoration, communication and other fields, and their structure generally includes a substrate, a distributed Bragg reflection layer, a first epitaxial layer, a light-emitting layer, a second epitaxial layer, a window layer, and a first electrode. and the second electrode. By using different semiconductor materials and structures, light-emitting diodes can cover a full color range from ultraviolet to infrared, and their luminous efficiency and brightness are continuously improved. Improving the luminous efficiency of light-emitting diodes has always been the goal pursued by researchers, improving the quality of epitaxial materials, reducing the abs...

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Problems solved by technology

However, the above method is often difficult to manufacture due to the consideration of the electrical properties of the material and the contact performance between the material and the window layer.

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