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Method for making solar batteries by adopting ion injection method

A technology of ion implantation and solar cells, applied in circuits, photovoltaic power generation, electrical components, etc., can solve problems such as silicon wafer quality degradation and solar cell performance deterioration, and achieve high conversion efficiency, maximum realization, and power output effects

Inactive Publication Date: 2011-02-16
JA SOLAR
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In addition, boron diffusion requires a high temperature of about 1000°C, which will easily cause the quali

Method used

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  • Method for making solar batteries by adopting ion injection method
  • Method for making solar batteries by adopting ion injection method
  • Method for making solar batteries by adopting ion injection method

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Embodiment 1

[0028] Disclosed here is a doping method that does not involve thermal diffusion on n-type crystalline silicon wafers and a design scheme that makes full use of this doping method, which can enable crystalline silicon solar cells to achieve the highest conversion efficiency and power output of maximization.

[0029] as attached Figure 1-2 As shown, one embodiment of the present invention is to use n-type crystalline silicon wafers with a resistivity of 0.5 to 15 Ω·cm to make high-efficiency solar cells. The crystalline silicon wafers referred to here may have undergone some other processing steps, such as cleaning and etching. , to remove pollutants and cutting damage layers on the surface of the silicon wafer, or perform anisotropic texturing to form a pyramid structure on the surface of the silicon wafer to increase the light absorption of the silicon wafer.

[0030] Active, charged particles can be doped on the first surface of the above-mentioned silicon wafer by ion imp...

Embodiment 2

[0036] as attached Figure 3a-3b As shown, on the basis of making a high-efficiency solar cell in Example 1, ion implantation can optimize the design structure of the solar cell, and carry out heavy doping on the local area of ​​the second surface of the silicon wafer, doping with the same conductivity type as the silicon wafer of impurities. As shown in FIG. 3( a ), dotted n++ doped regions are formed on the existing n+ layer. The n+ layer that has existed before can be formed by thermal diffusion, or can be formed by the above-mentioned ion implantation method. In order to form spot doping, a mask needs to be placed in front of the silicon wafer to be doped to ensure precise doping of the target area. The types of impurities forming n-type doping may include but not limited to phosphorus (P), arsenic (As), and antimony (Se). Multiple ion implantation with different ion beam energies can achieve deeper doping profiles.

[0037] In this embodiment, the silicon wafer is a p...

Embodiment 3

[0045] as attached Figures 4a-4c As shown, another preferred way to make high-efficiency solar cells is to use a crystalline silicon wafer with a resistivity of 0.5-15 Ω·cm, and use ion implantation doping to make the heavily doped n++ and p++ regions located on the silicon wafer. On the same surface, n-type and p-type doped ion beams are sequentially implanted using a pair of masks. The p-type dopant can be implanted on one surface of the n-type crystalline silicon wafer using a mask with opening grooves. The opening grooves can enable the ion beam to achieve band doping on the silicon wafer, and then implant n-type impurity ions Particles realize the interdigitated doping pattern and complete the full back structure of the interdigitated back contact (IBC) [M.D.Lammert and R.J.Schwartz, IEEE Trans.Electron.Devices, ED-24, 337 (1975)] Doping of batteries. Using the same implantation method, this doping method can also achieve the same doping pattern on p-type crystalline s...

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Abstract

The invention discloses a method for making solar batteries by adopting an ion injection method. The impurity doping on a silicon chip can be realized by adopting the ion injection method. Compared with a thermal diffusion doping process, the process of the invention has the advantages that the control is precise, the impurity doping can be repeated, the processing process is a low-temperature process, crystalline silicon solar batteries can achieve higher conversion efficiency, and the maximization of power output can be realized.

Description

technical field [0001] The present invention belongs to the technical field of photovoltaics, and in particular relates to a method for manufacturing solar cells by ion implantation. Background technique [0002] Photovoltaic technology is a technology that uses large-area p-n junction diodes to convert solar energy into electrical energy. This p-n junction diode is called a solar cell. The semiconductor materials used to make solar cells all have a certain band gap. When the solar cell is irradiated by the sun, photons with energy exceeding the band gap generate electron-hole pairs in the solar cell. The p-n junction separates the electron-hole pairs, and the p-n junction The asymmetry determines the flow direction of different types of photo-generated carriers, and the external power can be output through the external circuit connection. This is similar to the principle of ordinary electrochemical cells. [0003] The theoretical maximum conversion efficiency of a solar c...

Claims

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Application Information

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IPC IPC(8): H01L31/18H01L21/265
CPCY02E10/547H01L31/0682H01L31/1804Y02P70/50
Inventor 金井升尹海鹏朱生宾单伟刘勇
Owner JA SOLAR
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