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Solid-state image pickup element

A technology of imaging elements and imaging devices, which is applied in the direction of electrical components, semiconductor/solid-state device manufacturing, electric solid-state devices, etc., and can solve problems such as enlargement

Active Publication Date: 2012-10-10
UNISANTIS ELECTRONICS SINGAPORE PTE LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

That is, it is difficult to increase the ratio of the surface area of ​​the light receiving part (photodiode) to the surface area of ​​1 pixel

Method used

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  • Solid-state image pickup element
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Experimental program
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Effect test

Embodiment Construction

[0157] Hereinafter, the present invention will be described based on the embodiments shown in the drawings. In addition, the present invention is not limited thereto.

[0158] At figure 2 A plan view of one solid-state imaging device of the present invention is shown. also, image 3 It is a plan view of one solid-state imaging device of the present invention. Figure 4(a) is image 3 The X1-X1' sectional view of Fig. 4(b) is the equivalent circuit diagram of Fig. 4(a), and Fig. 5(a) is image 3 The Y1-Y1' sectional view of Fig. 5(b) is the equivalent circuit diagram of Fig. 5(a).

[0159] The present invention forms an oxide film 108 on a silicon substrate 107, and forms a signal line 106 on the oxide film 108;

[0160] An island-shaped semiconductor is formed on the signal line 106, and the island-shaped semiconductor has:

[0161] The n+ type diffusion layer 105 is located at the lower part of the island semiconductor and connected to the signal line;

[0162] The p-...

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PUM

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Abstract

The objective is to provide an image sensor, wherein the ratio of the surface area of the light receiving part to the surface area of one pixel is high. Disclosed is a solid-state image pickup element equipped with a signal line formed on a substrate, an island-like semiconductor arranged on said signal line, and a pixel selection line connected to the top part of said island-like semiconductor. Said island-like semiconductor is equipped with a first semiconductor layer that is arranged at the bottom part of said island-like semiconductor and is connected to said signal line, a second semiconductor layer adjacent to the top of said first semiconductor layer, a gate connected to said second semiconductor layer with an intervening insulation film, a charge accumulation part that is connected to said second semiconductor layer and made of a third semiconductor layer in which the amount of charge changes when light is received, and a fourth semiconductor layer that is adjacent to the topsof said second semiconductor layer and said third semiconductor layer and is connected to said pixel selection line. Said pixel selection line is formed with a transparent conductive film, and part of said gate is arranged inside a depression formed in the side wall of said second semiconductor layer.

Description

technical field [0001] The present invention relates to a solid-state imaging device. Background technique [0002] A CMOS (complementary metal oxide semiconductor, complementary metal oxide semiconductor) image sensor has been proposed as an amplifying solid-state imaging device in which each pixel has an amplifying function and is read by a scanning circuit. In a CMOS image sensor, a photoelectric conversion unit, an amplification unit, a pixel selection unit, and a reset unit are formed in one pixel, and three photoelectric conversion units are used in addition to a photodiode. MOS transistor (for example, Patent Document 1). That is, the conventional CMOS image sensor is composed of four elements. The CMOS sensor accumulates charges generated by a photoelectric conversion unit composed of a photodiode, amplifies the accumulated charges by an amplification unit, and reads the amplified charges by a pixel selection unit. [0003] At figure 1 A unit pixel of a prior art...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/146
CPCH01L29/42356H01L21/3083H01L27/1461H01L29/42376H01L29/4238H01L27/14614H01L27/14607H01L27/14679
Inventor 舛冈富士雄中村广记
Owner UNISANTIS ELECTRONICS SINGAPORE PTE LTD