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Semiconductor device and method of manufacturing the same

A manufacturing method and semiconductor technology, applied in the direction of semiconductor/solid-state device manufacturing, semiconductor devices, transistors, etc., can solve the problems of increasing the number of photolithography processes and complicating the manufacturing process of semiconductor devices, so as to suppress surges and complex effect

Active Publication Date: 2011-04-20
MITSUBISHI ELECTRIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] However, according to the technique of the above-mentioned publication, in order to obtain a structure in which the voltage threshold of the readout IGBT cell is higher than that of the main IGBT cell, there is a problem that, for example, the number of photolithography steps is increased, which complicates the manufacturing process of the semiconductor device.

Method used

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  • Semiconductor device and method of manufacturing the same
  • Semiconductor device and method of manufacturing the same
  • Semiconductor device and method of manufacturing the same

Examples

Experimental program
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Embodiment approach 1

[0041] refer to figure 1 The semiconductor device 100 of the present embodiment is a power semiconductor device, and includes a main portion SX (first semiconductor element portion), a sense portion SY (second semiconductor element portion), and a gate pad GP. The main portion SX and the sense portion SY are IGBT portions that switch between the main current IX (first current) and the sense current IY (second current) in accordance with the voltage of the gate pad GP, respectively. The absolute value of the read current IY is smaller than the absolute value of the main current IX, for example, about 1 / 1000, and the waveform of the read current IY roughly corresponds to the waveform of the main current IX. Therefore, the sense current IY can be used as a current for monitoring whether the value of the main current IX is too large.

[0042] The main portion SX has a main gate electrode 26X serving as its gate electrode, a main emitter electrode 31X serving as its emitter electr...

Embodiment approach 2

[0085] main reference Figure 7 , in the semiconductor device of this embodiment instead of the readout section SY of Embodiment 1 ( Figure 4 ) has a readout unit SYa. The sensing section SYa has a connection with the sensing unit CY ( Figure 4 ) The readout unit CYa configured in the same way.

[0086] In addition, for each sense cell CYa, the sense part SYa replaces the sense part SY( Figure 4 ) readout n + Source portion 29Y which contains a sense n with + The reading n of the depth EPa different from the depth EP of the source portion 29Y + The source portion 29Ya. With this configuration, the main n of the main part SX of the semiconductor device of this embodiment + The depth EP of the source portion 29X (the first source portion) ( image 3 ) and the readout n of the readout section SYa + The depth EPa( Figure 7 ) are different from each other.

[0087] In addition, since the configuration other than the above is substantially the same as the configuratio...

Embodiment approach 3

[0100] In the semiconductor device of the present embodiment instead of the main part SX of the first embodiment ( image 3 ) and readout SY ( Figure 4 ) with the main part SXb ( Figure 11 ) and readout SYb ( Figure 12 ).

[0101] refer to Figure 11 , the main part SXb has a connection with the main unit CX ( image 3 ) similarly configured main unit CXb. In addition, for each main unit CXb, the main part SXb replaces the main part SX ( image 3 ) of the main n + source portion 29X and main p + Each part of the contact portion 30X has a main n + Source portion 29Xb and main p + Contact portion 30Xb. master n + Source portion 29Xb and main p + The contact portions 30Xb are arranged in stripes along the main direction DX in a planar view, and constitute a so-called stripe structure. master n + Source portion 29Xb and main p + The contact portions 30Xb each have a first source width WnX and a first contact width WpX along the main direction DX. Thus multiple m...

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Abstract

A first semiconductor element portion (SX) for switching a first current includes a first channel surface having a first plane orientation. A first region of a semiconductor layer includes a first trench having the first channel surface. A first gate insulating film covers the first channel surface with a first thickness. A second semiconductor element portion (SY) for switching a second current smaller than the first current includes a second channel surface having a second plane orientation different from the first plane orientation. A second region of the semiconductor layer includes a second trench having the second channel surface. A second gate insulating film covers the second channel surface with a second thickness larger than the first thickness.

Description

technical field [0001] The present invention relates to a semiconductor device and a method of manufacturing the same, and more particularly, to a semiconductor device having a gate electrode formed to fill a trench and a method of manufacturing the same. Background technique [0002] In a semiconductor device, there is a main electrode for supplying the current to be switched, that is, a main current to the semiconductor layer, and a gate electrode for applying an electric field to the semiconductor layer, and the semiconductor device is controlled by the electric field generated by the gate electrode. The channel of the layer is used to switch semiconductor devices. A MOS (Metal Oxide Semiconductor) transistor or an insulated gate bipolar transistor (IGBT: Insulated Gate Bipolar Transistor) is a typical example. In particular, in power control applications, it is common to have a structure in which a large number of cells capable of switching operations are connected in p...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/08H01L29/423H01L29/739H01L21/822
CPCH01L29/66348H01L29/7397H01L29/7815H01L29/0834H01L29/045H01L29/42368H01L29/0696H01L29/4238H01L29/7813H01L21/823487H01L27/088H01L2924/0002H01L29/7811H01L2924/00H01L27/04
Inventor 高野和丰
Owner MITSUBISHI ELECTRIC CORP
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