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Method for fabricating an integrated circuit device and photoresist stripping composition

A technology for an integrated circuit and a manufacturing method, applied in the field of photoresist removal solutions, can solve problems such as poor yield, deformation of deposited film, and poor electrical performance

Active Publication Date: 2011-04-27
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] It is currently observed that known photoresist stripping solutions may exhibit one or more disadvantages
For example, dry etch plasma removal methods and the use of water-based removal solutions can cause damage to underlying substrates or patterned films
Damaged film layers may then exhibit poor electrical performance, poor yield and high cost of ownership
It is known that the organic removal solution may leave a part of the resist material, which will cause the deformation of the subsequent deposited film layer

Method used

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  • Method for fabricating an integrated circuit device and photoresist stripping composition
  • Method for fabricating an integrated circuit device and photoresist stripping composition
  • Method for fabricating an integrated circuit device and photoresist stripping composition

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Embodiment Construction

[0024] In order to make the above-mentioned purpose, features and advantages of the present invention more comprehensible, a preferred embodiment is specifically cited below, together with the accompanying drawings, and described in detail as follows:

[0025] It should be understood that many different embodiments will be provided below to implement different features of the present invention. The composition and configuration of each specific embodiment will be described below to simplify the present invention. These examples are not intended to limit the present invention. For example, in the description of forming the first member on or over the second member, in addition to disclosing the embodiment that includes the direct contact between the first member and the second member, it may also include that between the first member and the second member Embodiments with additional components added. In addition, reference numerals and reference words will be used repeatedly ...

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PUM

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Abstract

The invention relates to a method for fabricating an integrated circuit device and a photoresist stripping composition. The method may include providing a substrate; forming a first material layer over the substrate; forming a patterned second material layer over the substrate; and removing the patterned second material layer with a fluid comprising a steric hindered organic base and organic solvent. The damage of the substrate / underlying layer is reduced, the water pollution is reduced and the stripping effect of the photoresist material is improved.

Description

technical field [0001] The present invention relates to methods of fabricating integrated circuit devices, and more particularly to a method and photoresist removal solution for patterning various integrated circuit device components. Background technique [0002] The semiconductor integrated circuit industry has experienced rapid growth. Technological advances in integrated circuit materials and design have produced several generations of integrated circuits, each generation having smaller and more complex circuits than the previous generation. In the evolution of integrated circuits, as the geometry size (ie, the size of the smallest component or wire prepared by manufacturing technology) shrinks, the functional density (functional density, that is, the interconnection device in each chip area) number) has generally increased. Such downsizing processes generally add benefits by increasing fabrication efficiency and reducing required costs. Such size reductions also incr...

Claims

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Application Information

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IPC IPC(8): H01L21/82G03F7/42
CPCG03F7/425H01L21/31133
Inventor 王建惟张庆裕
Owner TAIWAN SEMICON MFG CO LTD