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Integrated circuit structure

A technology of integrated circuits and semiconductors, applied in the direction of circuits, electrical components, semiconductor devices, etc.

Active Publication Date: 2012-12-19
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Although the quality of the regrowth zone is better than that of blanket cambium formed from the same material, defects such as dislocations can still be observed

Method used

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  • Integrated circuit structure
  • Integrated circuit structure
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Embodiment Construction

[0023] The making and using of embodiments of the invention are described in detail below. It should be understood that many inventive concepts provided by these embodiments can be widely applied to various specific fields. The specific embodiments described are by way of illustration only and are not intended to be limiting.

[0024] The present invention provides novel methods for the epitaxial growth of low-defect semiconductor materials. Intermediate steps in the fabrication of integrated circuit structures are described according to the embodiments. In the different embodiments, elements of similar design are denoted by similar reference numerals.

[0025] refer to Figure 1A , providing a substrate 20 . The substrate 20 may be a semiconductor substrate formed of commonly used semiconductor materials such as silicon. An insulator such as a shallow trench isolation (STI) region 22 is formed in the substrate 20 . The depth D1 of the STI region 22 may be between about ...

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Abstract

An integrated circuit structure includes a semiconductor substrate formed of a first semiconductor material; two insulators in the semiconductor substrate; and a semiconductor region between and adjoining sidewalls of the two insulators. The semiconductor region is formed of a second semiconductor material different from the first semiconductor material, and has a width less than about 50 nm.

Description

technical field [0001] The present invention relates to an integrated circuit structure, and more particularly to a defect-reduced semiconductor material and method of forming the same. [0002] Background technique [0003] The speed of the MOS transistor depends on the drive current of the MOS transistor, which is closely related to the charge mobility. For example, when the electron mobility of the channel region is high, the NMOS transistor has a high driving current. And when the hole mobility of the channel region is high, the PMOS transistor has a high driving current. [0004] Germanium is a known semiconductor material. The most commonly used semiconductor material in the formation of integrated circuits is silicon, but germanium has higher electron mobility and hole mobility than silicon. Therefore, germanium is an excellent material for forming integrated circuits. However, silicon has been preferred over germanium in the past because an oxide of silicon (sili...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/06H01L21/20
CPCH01L21/76224H01L21/02532H01L21/02538H01L21/02455H01L21/02639H01L21/0245H01L21/77
Inventor 柯志欣万幸仁
Owner TAIWAN SEMICON MFG CO LTD