Unlock instant, AI-driven research and patent intelligence for your innovation.

Quartz crucible

A quartz crucible and quartz sand technology, applied in the field of single crystal production devices, can solve the problems of high cost, low production efficiency of silicon single crystals, low single crystal yield and the like, and achieve the effect of improving the yield

Active Publication Date: 2013-03-27
ZHENJIANG RENDE NEW ENERGY TECH
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The technical problem to be solved by the present invention is to overcome the disadvantages of low single crystal yield and low silicon single crystal production efficiency and high cost due to the short service life of the existing quartz crucible when the existing quartz crucible is used to generate silicon single crystal, and provides a Quartz crucible with high silicon single crystal single crystal yield, high productivity, and low production cost

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Quartz crucible
  • Quartz crucible

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0014] figure 2 It is a schematic structural diagram of a quartz crucible according to an embodiment of the present invention. Such as figure 2 As shown, the quartz crucible provided by the present invention is used for loading silicon melt 13, and is divided into an inner layer 11 and an outer layer 12, and the sum of the thicknesses of the inner layer 11 and the outer layer 12 is basically the wall thickness of the pot wall. constant, the purity of the inner layer 11 quartz sand is higher than the purity of the outer layer 12 quartz sand, and the inner layer 11 is made of high-purity quartz sand. In this embodiment, the purity of the inner layer 11 quartz sand is 99.9999%, no bubbles, its material cost and manufacturing cost are much higher than the outer layer 12; the purity of the quartz sand in the outer layer 12 is lower than that of the inner layer 11, and the bubble content is high. When the quartz sand in the outer layer 12 enters the silicon melt 13, it is easy t...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
heightaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention relates to a quartz crucible for holding a silicon solution, wherein the wall of the quartz crucible is divided into an inner layer and an outer layer; the sum of the thickness of the inner layer and the thickness of the outer layer, namely the wall thickness of the quartz crucible, is essentially constant; the inner layer and the outer layer are made of quartz sand; the purity of quartz sand in the inner layer is higher than that of quartz sand in the outer layer; and the thickness of the inner layer in an expected stopping position of the liquid level of the silicon solution is increased, and the thickness of the outer layer in the expected stopping position of the liquid level of the silicon solution is correspondingly reduced. The invention solves the problems of low single crystal yield when the traditional quartz crucible is applied to generate silicon single crystals, and low production efficiency and higher cost due to the short service life of the traditional quartz crucible, and provides a quartz crucible with high silicon single crystal yield, high productivity and low production cost.

Description

technical field [0001] The invention relates to a single crystal production device. Specifically, it is a quartz crucible filled with silicon melt. Background technique [0002] In the Czochralski production process of electronic grade and solar grade silicon single crystal, the quartz crucible used for loading silicon melt is a key consumable. In the production process of single crystal, if low-purity quartz sand particles enter the silicon melt, when these quartz sand particles move to the solid-liquid interface of the silicon melt, it is very likely that the single crystal will become polycrystalline. Therefore, the quartz crucible used to load the silicon melt needs to be made of high-purity quartz sand. At present, only a few foreign companies monopolize the production of high-purity quartz sand raw materials. Not only is it expensive, but it is so rare that it is difficult to buy even if you have money. In order to reduce the use of high-purity quartz sand and reduc...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C30B15/10C30B29/06
Inventor 孟涛
Owner ZHENJIANG RENDE NEW ENERGY TECH