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Nonvolatile memory device and wear leveling method thereof

A non-volatile, wear-leveling technology, applied to non-volatile memory devices and their wear-leveling fields, can solve problems such as high cost and achieve the effect of extending service life

Inactive Publication Date: 2011-06-15
ASOLID TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In other words, this existing loss leveling technology requires high cost

Method used

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  • Nonvolatile memory device and wear leveling method thereof
  • Nonvolatile memory device and wear leveling method thereof
  • Nonvolatile memory device and wear leveling method thereof

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Embodiment Construction

[0031] Please refer to the following Figure 4 , Figure 4 It is an operation flowchart of an embodiment of the wear leveling method of the non-volatile memory of the present invention. and please also refer to Figure 5A ~ Figure 5B as well as Image 6 A schematic diagram of the operation of the embodiment of the wear leveling method for the non-volatile memory of the present invention. Wherein, non-volatile memory (Non-volatile memory, NVM) is for example mask read-only memory (Mask Read-Only Memory, Mask ROM), programmable read-only memory (Programmable Read-Only Memory, PROM), erasable Programmable Read-Only Memory (Erasable Programmable Read-Only Memory, EPROM), Electrically Erasable Programmable Read-Only Memory (EEPROM), or flash memory.

[0032] In this embodiment, the steps of accessing the non-volatile memory include: first, step S410 divides the data storage area and the blank array area according to the multiple physical addresses of the non-volatile memory, th...

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Abstract

The invention provides a nonvolatile memory device and a wear leveling method thereof. The wear leveling method comprises the following steps of: firstly, dividing a data storage region and a blank array region according to a plurality of physical block addresses of the nonvolatile memory; secondly, comparing historic programming frequencies of a plurality of data blocks in the blank array region; and finally, exchanging the physical block addresses which correspond to the data blocks with the maximum historic programming frequency in the blank array region with one of the plurality of physical block addresses corresponding to the plurality of data blocks in the data storage region.

Description

technical field [0001] The present invention relates to a non-volatile memory, and in particular to a non-volatile memory device and a wear leveling method thereof. Background technique [0002] Flash memory (flash memory) is a programmable (programmable) read only memory (read only memory, ROM), which allows multiple erasing and updating of stored data. This kind of flash memory is widely used in today's electronic products, and is often used as a medium for exchanging data between digital electronic products, such as memory cards and flash drives. [0003] Usually, the flash memory is divided into multiple data blocks (blocks), and each data block is subdivided into many data pages (pages) with the same capacity. Here, there is a limitation in the flash memory, that is, when updating data in the flash memory, it is necessary to erase the data block where the address to be updated is located, and then write new data . However, data erasure of each data block in the flash...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06F12/02
Inventor 周晓薇欧富国
Owner ASOLID TECH