Method for detecting nickel and platinum removing device
A nickel-platinum and device pair technology is applied in the field of detecting nickel-platinum removal devices, which can solve the problems of finished product failure, waste of cost and manufacturing time, and finished product surface contamination, and achieve the effect of avoiding failed finished products and saving cost and manufacturing time.
Inactive Publication Date: 2011-06-29
SEMICON MFG INT (SHANGHAI) CORP
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[0012] Therefore, the above-mentioned existing detection methods cannot truly reflect the cleanliness of the nickel-platinum removal device, which leads to the manufacture of a large number of finished products and surface contamination when the nickel-platinum removal device does not meet the process requirements, resulting in a large number of failures of the finished products. Wasted cost and manufacturing time
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[0027] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below with reference to the accompanying drawings and examples.
[0028] The core idea of the present invention is to provide a test sample with silicon nitride SiN formed on the surface, and use a nickel-platinum removal device to perform a nickel-platinum removal process on the test sample. The number of impurity particles on the SiN surface is detected by optical detection tools, and the cleanliness of the nickel-platinum removal device is detected. When the cleanliness of the nickel-platinum removal device meets the process requirements, the inspection process can be ended and the nickel-platinum removal process can be started on the wafer to be processed.
[0029] figure 2 It is a flow chart of the detection method of the nickel-platinum removal device of the present invention. Such as figure 2 As shown, t...
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Abstract
The invention discloses a method for detecting a nickel and platinum removing device. The method comprises the following steps: A: providing a test sample with the surface on which silicon nitride Si is formed, and using a nickel and platinum removing device to carry out nickel and platinum removal process on the test sample; B: using an optical measurement tool to detect whether the number of sundries on the surface of SiN meets the technological requirements or not, if so, moving to the step C, or else, ending the process; and C: cleaning the nickel and platinum removing device and then moving back to the step A. According to the method, the test sample with the surface on which SiN is formed is utilized to detect the nickel and platinum removing device, so that the cleanness of the nickel and platinum removing device can be truly reflected. Therefore, the nickel and platinum removing device which can not meet the technological requirements can be adjusted in time, and the generation of ineffective finished products is fundamentally avoided, thus cost and manufacturing time can be greatly reduced.
Description
technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for detecting a nickel-platinum removal device. Background technique [0002] With the wide application of electronic devices, the manufacturing process of semiconductors has been developed rapidly. In the manufacturing process of semiconductors, the formation of self-aligned metal silicides is involved. At present, the formation of self-aligned silicide is mostly realized by nickel-silicon compound, but in the whole process, the nickel-silicon compound does not have enough stable heat resistance to meet the requirements of various process temperatures. Therefore, by adding a small amount of platinum (about 5%) to the nickel silicon compound, the thermal stability of the synthesized metal silicide film is greatly increased, and then the nickel and platinum in the synthesized metal silicide film are removed. [0003] Traditional nickel removal methods, such as ...
Claims
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IPC IPC(8): H01L21/66H01L21/00
Inventor 刘佳磊
Owner SEMICON MFG INT (SHANGHAI) CORP