Method for fabricating an integrated circuit device

Abstract

The present invention provides a method for fabricating an integrated circuit device. The method includes providing a substrate having a first region, a second region, and a third region; and forming a first gate structure in the first region, a second gate structure in the second region, and a third gate structure in the third region, wherein the first, second, and third gate structures include a gate dielectric layer, the gate dielectric layer being a first thickness in the first gate structure, a second thickness in the second gate structure, and a third thickness in the third gate structure. Forming the gate dielectric layer of the first, second, and third thicknesses can include forming an etching barrier layer over the gate dielectric layer in at least one of the first, second, or third regions while forming the first, second, and third gate structures, and / or prior to forming the gate dielectric layer in at least one of the first, second, or third regions, performing an implantation process on the at least one region. The method can reduce a number of etching oxidation layers of an active region.

Description

technical field [0001] The present invention relates to methods of forming integrated circuit components, and more particularly to forming integrated circuit components having gate dielectric layers of varying thicknesses. Background technique [0002] The semiconductor integrated circuit industry has grown rapidly for some time. In the process of integrated circuit progress, its functional density (the number of interconnected elements per unit area of ​​the chip) is getting larger and larger, while its size (the smallest element or connection that can be formed by the process) is getting smaller and smaller. . Process size reduction is beneficial for improving process efficiency and associated costs. However, the above-mentioned progress will also increase the complexity of integrated circuit technology and production. In order to make the progress easy to understand, the development of integrated circuit technology requires similar production methods and development. ...

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Problems solved by technology

However, the above-mentioned progress will also increase the complexity of integrated circuit technology and production. In order to make the progress easy to understand, the development of integrated circuit technology requires similar production methods and development.

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