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A kind of preparation method of junction terminal of sic high voltage power device

A technology for high-voltage power devices and junction terminals, which is applied in the field of preparation of junction terminals for SiC-based high-voltage power devices, can solve the problems of increasing device complexity and manufacturing costs, reducing device reliability and repeatability, and saving device manufacturing costs. Effects of improving reliability and repeatability and reducing the number of etching times

Inactive Publication Date: 2020-01-03
INST OF ELECTRONICS ENG CHINA ACAD OF ENG PHYSICS
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  • Description
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  • Application Information

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Problems solved by technology

However, if multi-level steps are prepared by preparing one step in each etching process, this will greatly increase the complexity and cost of device preparation, and at the same time, dozens of times of etching will greatly reduce the reliability of the device. and repeatability

Method used

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  • A kind of preparation method of junction terminal of sic high voltage power device
  • A kind of preparation method of junction terminal of sic high voltage power device
  • A kind of preparation method of junction terminal of sic high voltage power device

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Embodiment Construction

[0018] Below in conjunction with accompanying drawing and specific embodiment the present invention is described in further detail:

[0019] Using the present invention to prepare SiC high-voltage power devices with 16 steps as an example, a total of 5 etchings, according to Figure 1-Figure 8 The schematic diagram of the preparation of the junction terminal of the SiC high-voltage power device is shown, and the specific preparation steps are as follows:

[0020] Step 1: Provide a piece of SiC material structure for preparing a high-voltage power device. Such as figure 1 As shown, the thickness of the SiC layer material layer for preparing the junction terminal in the SiC material layer is D. The semiconductor material may be Si material, SiC material, GaN material, AlN material and the like.

[0021] Step 2: Proceed Level etching makes 1 step. A silicon oxide layer is deposited on the SiC material layer, and the first-level well area is defined by photolithography. Aft...

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Abstract

The invention discloses a preparation method of a SiC high-voltage power device junction terminal. Firstly, according to blocking voltage requirement of different levels, a number (2n) of steps is determined and the mask pattern structure design is carried out; then a multi-level step structure is formed on a SiC sample through multiple times of step preparation process (including preparing a hardmask layer, etching a step region, and removing a silicon oxide hard mask layer), and finally steps of 2n levels are formed through (n+1) times of step etching. For making the SiC high-voltage powerdevice junction terminal with the steps of multiple levels, the terminal can be prepared only with very few times of step etching, thus while the steps of multiple levels can be realized and SiC high-voltage power device blocking voltage is greatly raised, the preparation process of the multi-step junction terminal can be greatly simplified, and thus the method has a great application prospect inthe SiC high-voltage power device.

Description

technical field [0001] The invention belongs to the technical field of ultra-large-scale integrated circuit (ULSI) manufacturing technology, and specifically relates to a method for preparing a junction terminal of a SiC-based high-voltage power device. Background technique [0002] The basic characteristics of power semiconductor devices are high voltage, high current and high temperature resistance, which requires their manufacturing materials to have wide band gap, high critical avalanche breakdown electric field strength and high thermal conductivity. Compared with traditional silicon materials, silicon carbide has comprehensive superior physical properties (high breakdown electric field strength, superior thermal stability, high carrier saturation drift velocity and high thermal conductivity), making it suitable for high temperature, high frequency, The application fields of high power and radiation resistance are very popular, and it is an ideal material for realizing ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/04H01L29/06
Inventor 李志强李俊焘徐星亮张林代刚
Owner INST OF ELECTRONICS ENG CHINA ACAD OF ENG PHYSICS
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