Metal organic chemical vapor deposition (MOCVD) reaction system
A reaction system and reaction chamber technology, applied in gaseous chemical plating, metal material coating process, coating, etc., can solve the waste of MO source and process gas, the clogging of the spray hole of the spray plate, and the temperature of the spray plate cannot be solved. Get effective control and other problems to achieve the effect of improving quality and reducing consumption
Inactive Publication Date: 2011-07-20
ENRAYTEK OPTOELECTRONICS
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Problems solved by technology
[0019] However, the existing MOCVD reaction system does not have a spray plate temperature control system, so that the temperature of the spray plate cannot be effectively controlled
If the temperature of the spray plate is too high (because the distance between the spray plate and the heating base is too close), the mixing of MO source and process gas in the spray plate will cause source decomposition and other gas phase reactions, and the reaction products will be deposited on the spray plate Sometimes the inner and outer surfaces of the substrate will be peeled off to form dust particles, and in severe cases, the spray hole of the spray plate will be blocked; if the temperature of the spray plate is too low, the surface source of the substrate in the reaction chamber will be decomposed and The gas phase reaction rate is reduced, resulting in a great waste of MO source and process gas
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[0046] The MOCVD reaction system proposed by the present invention will be further described in detail below in conjunction with the accompanying drawings and specific examples. Advantages and features of the present invention will be apparent from the following description and claims. It should be noted that all the drawings are in very simplified form and use imprecise ratios, which are only used for the purpose of conveniently and clearly assisting in describing the embodiments of the present invention.
[0047] The core idea of the present invention is to provide a MOCVD reaction system, which includes a reaction chamber, a shower plate, a heating base, a heater, a gas outlet, and a temperature control device, and the temperature control device controls the spray plate The temperature is effectively controlled, which is conducive to improving the quality of MOCVD deposited films, while reducing the consumption of process gases.
[0048] Please refer to Figure 1 to Fig...
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The invention discloses a metal organic chemical vapor deposition (MOCVD) reaction system. The reaction system comprises a reaction chamber, a spray tray, a heating base, a heater, a gas outlet and a temperature control device, wherein the temperature control device is used for effectively controlling the temperature of the spray tray. Thus, the quality of an MOCVD thin film is improved, and process gas consumption is reduced.
Description
technical field [0001] The invention relates to semiconductor film deposition equipment, in particular to an MOCVD reaction system. Background technique [0002] As is well known, Metal-Organic Chemical Vapor Deposition (MOCVD, Metal-Organic Chemical Vapor Deposition) method has been widely used in the preparation of light-emitting diodes. MOCVD is a key technology for preparing compound semiconductor thin films, which uses relatively volatile organic compounds, such as Ga(CH 3 ) 3 etc. as the source reactants of metal atoms that are difficult to volatilize, and NH 3 , AsH 3 Wait for the hydride to react, and generate GaN, GaAs and other thin films on the heated substrate for microelectronics or optoelectronic devices. [0003] Existing MOCVD reaction systems include: [0004] reaction chamber; [0005] The spray plate is arranged on the top of the reaction chamber, and an air inlet is arranged on it, and the air inlet is used for inputting reaction gas; [0006] a he...
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Inventor 肖德元张汝京饶青程蒙召
Owner ENRAYTEK OPTOELECTRONICS