Silicon carbide power module and packaging method thereof
A technology of power modules and packaging methods, which is applied in the manufacture of electrical components, electrical solid devices, semiconductor/solid devices, etc., can solve problems such as poor thermal cycle capability, lack of reliability, and lack of mechanical strength, so as to avoid thermal shock, Avoid thermal expansion mismatch and facilitate heat dissipation
Active Publication Date: 2012-10-24
ZHUZHOU CSR TIMES ELECTRIC CO LTD +1
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Problems solved by technology
This method lacks reliability under high-power, high-temperature operating conditions, has poor thermal cycle capability, and does not have sufficient mechanical strength
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[0033] In order to make the above objects, features and advantages of the present invention more clearly understood, the present invention will be described in further detail below with reference to the accompanying drawings and specific embodiments.
[0034] The present invention proposes a set of crimping packaging solutions suitable for parallel connection of silicon carbide multi-chips. This solution adopts reasonable structural design and suitable packaging materials, and is widely applicable to silicon carbide thyristors, diodes, MOSFETs, IGBTs, JEFTs, BJTs, etc. The power device enables the device to work stably at a high temperature of 250°C, and the heat dissipation density can reach 450W / cm2. In addition, this method not only solves the problem of uneven pressure receiving force of multi-chips, but also makes packaging very convenient.
[0035] Silicon carbide multi-chip parallel crimp packaging has the advantages of convenient operation, high stability, and strong t...
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The invention relates to a packaging method of a silicon carbide power module. The packaging method comprises the following steps of: welding an aluminum nitride isolation layer on a molybdenum plate, placing a silicon carbide chip in a blank of the aluminum nitride isolation layer, and welding the silicon carbide chip with the molybdenum plate; welding a molybdenum block on the silicon carbide chip, and reserving a gate electrode lead slot on the molybdenum block; placing a lead in the gate electrode lead slot, arranging a compression ring on the lead, placing a spring used for crimping in the compression ring, and collecting and leading out the lead; and carrying out integral casting forming on the molybdenum plate, the silicon carbide isolation layer and the silicon carbide chip through using epoxy resin, installing a base, a tube shell and a tube cap, and packaging. The invention also discloses a silicon carbide power module. The invention ensures that the silicon carbide power module has higher reliability and stronger thermal cycle capacity under the working conditions of high power and high temperature.
Description
technical field [0001] The invention relates to the field of silicon carbide power device packaging, in particular to a method for packaging a silicon carbide power module and the silicon carbide power module. Background technique [0002] Power semiconductor devices are widely used in computer, network communication, consumer electronics, industrial control, automotive electronics, locomotive traction, steel smelting, high-power power supply, power system and other fields. In addition to ensuring the normal operation of these devices, power devices can also play a role Effective energy saving is indispensable in the development of low-carbon economy, energy conservation and emission reduction, and control of climate warming. [0003] Traditional silicon-based power devices are limited by the inherent physical properties of silicon materials, and have encountered insurmountable difficulties in high-frequency and high-power applications. In this case, power devices based on ...
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IPC IPC(8): H01L21/50H01L21/58H01L21/60H01L23/488H01L23/29H01L25/00
CPCH01L24/01H01L2924/1301H01L2924/13055H01L2924/13091H01L2924/351
Inventor 丁荣军罗海辉雷云李继鲁吴煜东刘国友彭勇殿张明温家良金锐
Owner ZHUZHOU CSR TIMES ELECTRIC CO LTD