The invention relates to a method for preparing a spherical
cadmium sulfide (CdS)
semiconductor film, which comprises the following steps of: putting
cadmium acetate into a
beaker, dripping
oleic acid into the
beaker, uniformly mixing the
cadmium acetate and the
oleic acid, and adding
distilled water into the mixture to obtain solution A; adding
sodium thiosulfate pentahydrate into the solution A and performing
ultrasonic dispersion to obtain solution B; adding a film forming aid into the solution B and performing ultrasonic
processing to form a uniform
sol C; fixing a substrate to a
cathode of an electrodeposition device, immersing the substrate in the
sol C for electrodeposition to obtain a
cadmium sulfide film D, and diluting the solution subjected to electrodeposition by ten times to obtain solution E; and pouring the solution E into a
hydrothermal reaction kettle, putting the film D into the
hydrothermal reaction kettle, immersing the film D in the solution E, naturally cooling to
room temperature after the reaction is finished, taking the film D out, and cleaning and
drying the
hydrothermal reaction kettle to obtain a CdS photoelectric film on the surface of the substrate. In the method, the reaction is finished in a
liquid phase and subsequent
crystallization and
thermal treatment are avoided;
processing equipment is simple; the quality of the film is controlled by controlling the deposition
voltage, deposition time, the pH value of a precursor and
microwave hydrothermal postprocessing; and the obtained film has high purity and uniformity.