Electro-optical modulator having bias electrodes based on doped-semiconductor-metal contact for mitigating DC bias drift

Abstract

There is provided a lithium niobate modulator structure (30) for mitigating DC bias drift comprising a highly doped semiconductor layer (44, 54) patterned above an optical waveguide (34) having one or more DC sections (38, 40) and an RF section (42), wherein a metal layer or contact (50) is in contact with a portion of the semiconductor layer (44, 54) and a buffer layer (46) is deposited in the RF section (42). There is also provided a method of making a lithium niobate electro-optical modulator having the aforementioned structure.

Description

technical field [0001] The present disclosure relates to lithium niobate optoelectronic modulators, and more particularly to lithium niobate optoelectronic modulators having a doped semiconductor structure that mitigates DC bias drift. Background technique [0002] An optoelectronic modulator is an optical device in which a light beam is modulated using a signal control element exhibiting the optoelectronic effect. Optical modulators are key components for high-speed optical transmission systems. Due to the high photoelectric coefficient and high-quality crystallization of lithium niobate, this type of photoelectric modulator is usually made of lithium niobate (LiNbO) called "LN". 3 )production. LN modulators are mainly used as optoelectronic modulators, which convert high-speed electrical signals into optical signals for long-distance communication systems, such as free-space laser communication systems for satellite and terrestrial applications, and terrestrial and under...

AI Technical Summary

Problems solved by technology

The buffer layer has a lower resistivity which results in reduced DC bias drift

However, such devices using multi-component oxide buffer layers on both the DC and RF sections have repeatability and consistency issues with DC bias drift mitigation

Images