Electro-optical modulator having bias electrodes based on doped-semiconductor-metal contact for mitigating DC bias drift

一种光电调制器、半导体的技术，应用在仪器、光学、非线性光学等方向，能够解决缓冲层低电阻率、DC偏压漂移减小等问题，达到易于构造、减轻DC偏压漂移、消除不可重复性问题的效果

Inactive Publication Date: 2011-07-20
THE BOEING CO
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The buffer layer has a lower resistivity which results in reduced DC bias drift
However, such devices using multi-component oxide buffer layers on both the DC and RF sections have repeatability and consistency issues with DC bias drift mitigation

Method used

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  • Electro-optical modulator having bias electrodes based on doped-semiconductor-metal contact for mitigating DC bias drift
  • Electro-optical modulator having bias electrodes based on doped-semiconductor-metal contact for mitigating DC bias drift
  • Electro-optical modulator having bias electrodes based on doped-semiconductor-metal contact for mitigating DC bias drift

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Embodiment Construction

[0019] The disclosed embodiments will now be described more fully hereinafter with reference to the accompanying drawings, in which some, but not all, disclosed embodiments are shown. Indeed, several different embodiments may be provided, and these should not be viewed as limiting to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art.

[0020] The devices and methods of the disclosed embodiments may be used with a variety of applications including, but not limited to, long-range communication systems such as free-space laser communication systems for satellite and terrestrial applications, and terrestrial and underwater fiber optic communication systems . Accordingly, those skilled in the art will appreciate and understand that the devices and methods of the present disclosure can be used in many applications involving LN o...

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Abstract

There is provided a lithium niobate modulator structure (30) for mitigating DC bias drift comprising a highly doped semiconductor layer (44, 54) patterned above an optical waveguide (34) having one or more DC sections (38, 40) and an RF section (42), wherein a metal layer or contact (50) is in contact with a portion of the semiconductor layer (44, 54) and a buffer layer (46) is deposited in the RF section (42). There is also provided a method of making a lithium niobate electro-optical modulator having the aforementioned structure.

Description

technical field [0001] The present disclosure relates to lithium niobate optoelectronic modulators, and more particularly to lithium niobate optoelectronic modulators having a doped semiconductor structure that mitigates DC bias drift. Background technique [0002] An optoelectronic modulator is an optical device in which a light beam is modulated using a signal control element exhibiting the optoelectronic effect. Optical modulators are key components for high-speed optical transmission systems. Due to the high photoelectric coefficient and high-quality crystallization of lithium niobate, this type of photoelectric modulator is usually made of lithium niobate (LiNbO) called "LN". 3 )production. LN modulators are mainly used as optoelectronic modulators, which convert high-speed electrical signals into optical signals for long-distance communication systems, such as free-space laser communication systems for satellite and terrestrial applications, and terrestrial and under...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02F1/225G02F1/03
CPCG02F1/0316G02F2203/21G02F2201/07G02F1/2255G02F2202/10G02F1/03G02F1/225
Inventor K·塞严R·R·海耶斯
Owner THE BOEING CO
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