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Method for forming electrical interconnection in organic optoelectronic device, method for making organic optoelectronic device and organic optoelectronic device

A technology for organic electronic devices and electrical interconnection, which is used in the manufacture of semiconductor/solid-state devices, electric solid-state devices, photovoltaic power generation, etc., to achieve the effects of uniformity improvement, process simplification, and series resistance improvement.

Active Publication Date: 2011-07-27
NOVALED GMBH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

It is also desirable to be able to produce more complex electrical interconnections in organic optoelectronic devices in an easier manner

Method used

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  • Method for forming electrical interconnection in organic optoelectronic device, method for making organic optoelectronic device and organic optoelectronic device
  • Method for forming electrical interconnection in organic optoelectronic device, method for making organic optoelectronic device and organic optoelectronic device
  • Method for forming electrical interconnection in organic optoelectronic device, method for making organic optoelectronic device and organic optoelectronic device

Examples

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Effect test

example 1

[0152] Example 1): Organic Light Emitting Devices Including Electrical Interconnects

[0153] Provide 100mm×100mm glass substrate. A 90 mm x 78 mm metal layer SML is deposited on the glass substrate. The metal layer is patterned to form parallel strips: a wide strip (RA-area A) with dimensions 90mm x 20mm and a narrow strip (RB-area B) with dimensions 90mm x 3mm; between the strips There is always a 1mm space. Stripes were formed in the following configuration: (RB)-3 x ((RA)-(RB)) ("-" indicates lateral layer separation). This configuration is compatible with Figure 4 SML in is similar.

[0154] An unpatterned 80 mm x 78 mm OSL comprising the following layers was deposited on the SML as follows: 50 nm thick NPD layer doped with F4TCNQ; 10 nm thick undoped NPD layer; 20 nm blue emitter main layer doped with fluorescent emitters 10 nm of BPhen; 60 nm of BPhen doped with Cs. And, a 20 nm Ag layer was deposited as TCL.

[0155] The overlap between OSL, (RA) and TCL form...

example 2

[0158] Example 2): Organic Light Emitting Devices and Electrical Interconnects on Metal Substrates

[0159] A 0.8 mm thick stainless steel plate having a lateral dimension of 100 mm×100 mm was provided as a substrate. A 2.3 μm thick polyimide layer (PI2555 from HD Microsystems) was deposited on the metal substrate by spin coating at 3500 rpm and heating at 180° C. for half an hour. Repeat the steps of Example 1) (the first one is expected: a glass substrate is provided). As expected, the device worked as in Example 1).

example 3

[0160] Example 3): Organic Light Emitting Devices and Electrical Interconnects on Metal Substrates

[0161] A 0.8 mm thick stainless steel plate having a lateral dimension of 100 mm×100 mm was provided as a substrate. The patterned non-conductive layer was deposited as explained above. like Figure 4 As shown, a 100 nm thick Ag SML layer was deposited on the polyimide layer (RA) and on the exposed substrate area (RB). In this case, the feed contact is provided by the substrate itself (region (RN)). As in Example 1), the steps of depositing OSL and TCL were repeated.

[0162] Electrical interconnections are formed by applying laser pulses on the region (RB); the laser is applied from the top side (in other words, not through the substrate). The laser used in this example was a pulsed Nd:YVO4 laser operating at 1064 nm. Interconnect points were fabricated over a length of 80 mm per region (RB) (this length overlapped with the OSL) with a line density of 1 dot / 250 μm.

[...

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Abstract

The invention relates to a method for forming electrical interconnection in an organic optoelectronic device, a method for making the organic optoelectronic device and the organic optoelectronic device. The method for forming electrical interconnection in the organic optoelectronic device comprises the following steps of: providing a first conductive layer; making an organic semi-conductive layer deposited on the first conductive layer; making a second conductive layer deposited on the organic semi-conductive layer; laser-irradiating a connecting area and electrically connecting the first conductive layer and the second conductive layer through the organic semi-conductive layer; and forming an electrical short circuit between the first conductive layer and the second conductive layer in the connecting area.

Description

technical field [0001] The present invention relates to new technologies in the field of organic optoelectronic devices, in particular, to organic light emitting diodes (OLEDs) and organic solar cells. Background technique [0002] The field of organic electronics has attracted considerable attention over the past few years due to rapid developments in energy efficiency, mainly in organic optoelectronic devices (OOED) and organic photovoltaic devices such as organic light-emitting devices. [0003] Organic light emitting diodes have undergone very rapid development in recent years. In particular, for light-emitting diodes emitting white light, efficiencies of greater than 100 lumens / W were successfully obtained. The lifetime of these systems has also increased very rapidly and at the same time, for some material systems, the value of 10,000 hours has been clearly exceeded. Organic light-emitting diodes therefore also appear to be of interest for use in lighting systems. T...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/48H01L51/44H01L51/56H01L51/52H01L27/30H01L27/32H10K99/00
CPCY02E10/50Y02E10/549Y02P70/50H10K59/86H10K39/12H10K71/60H10K71/00
Inventor 皮埃尔·保罗·若贝尔鲁道夫·莱斯曼扬·布洛赫维茨-尼莫特安斯加尔·维尔纳
Owner NOVALED GMBH
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