Check patentability & draft patents in minutes with Patsnap Eureka AI!

Impulse modulation method and circuit for switch transistor drive signals

A technology for switching transistors and driving signals, applied in the field of pulse modulation circuits, can solve problems such as increasing development difficulty and rising cost, and achieve the effects of reduced development cost and development difficulty, fewer components, and low cost

Active Publication Date: 2013-04-24
MORNSUN GUANGZHOU SCI & TECH
View PDF2 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, for low-power high-voltage input switching power supplies, if a microcontroller is used to modulate the driving signal, on the one hand, the cost will increase, and at the same time, the microcontroller needs to be programmed, which will increase the difficulty of development

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Impulse modulation method and circuit for switch transistor drive signals
  • Impulse modulation method and circuit for switch transistor drive signals
  • Impulse modulation method and circuit for switch transistor drive signals

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040] Embodiments of the present invention are as Figure 4 As shown, the three-level two-transistor flyback main power circuit, the feedback circuit, the control IC, the pulse modulation circuit, and the isolation drive circuit are sequentially connected to form a two-transistor three-level flyback converter, wherein the pulse modulation circuit (such as figure 2shown) includes a switching diode D6, an RC charging and discharging circuit composed of a resistor R1 and a capacitor C4, a voltage comparator U1 and a voltage comparator U2;

[0041] The anode of the switching diode D6 is connected to the PWM output pin Drv of the PWM control IC to input pulses, the cathode of the switching diode D6 is connected to the non-inverting input terminals of the voltage comparator U1 and the voltage comparator U2, and the resistor R1 is connected in parallel to the positive of the diode D6 Between the negative poles, one end of the capacitor C4 is connected to the negative pole of the di...

Embodiment 2

[0059] Such as Figure 5 Shown is the circuit schematic diagram of Embodiment 2 of the present invention. The difference from Embodiment 1 is that a pull-up resistor R2, R3, to improve the drive capability of the circuit.

Embodiment 3

[0061] Such as Figure 6 As shown, in order to further improve the present invention, on the basis of Embodiment 1, the pulse modulation circuit of the present invention adds n (n=1, 2...) voltage comparators, wherein, the non-inverting input terminal of the voltage comparator Un is connected in parallel On the non-inverting input terminal of the voltage comparator U1 or the voltage comparator U2, the inverting input terminal of the voltage comparator Un is connected to the corresponding reference voltage Vrefn, and the modulated output pulse Drvn is output through the pulse output terminal, and each voltage comparator The output terminals can realize the output pulse drive signal with rising edge synchronization and falling edge delay sequentially, and each output pulse is output to the isolation drive circuit.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses an impulse modulation method and circuit for switch transistor drive signals. The impulse modulation circuit comprises a diode D6, a resistor R1, a capacitor C4, a voltage comparator U1 and a voltage comparator U2. The anode of the diode D6 is connected with input pulse and the cathode of the diode D6 is respectively connected to non-inverting input ends of the voltage comparator U1 and the voltage comparator U2. The resistor R1 is connected between the anode and the cathode of the diode D6 in parallel. One end of the capacitor C4 is connected to the cathode of the diode D6, the other end of the capacitor C4 is earthed. The inverting input ends of the voltage comparator U1 and the voltage comparator U2 are respectively connected to voltage reference Vref1 and voltage reference Vref2. The invention can be applied to a small-power high-voltage injection switching power supply and realize that the input pulse is converted into pulse drive signals with synchronous rising edge and successively delayed failling edge.

Description

technical field [0001] The invention relates to a pulse modulation technology of a switching transistor drive signal, in particular to a pulse modulation method and a pulse modulation circuit of a switching transistor drive signal applied to a low-power high-voltage input switching power supply in a three-level technology. Background technique [0002] With the rapid development of power electronics technology, the application fields of power electronics products such as switching power supplies and frequency converters are becoming wider and wider. The development of ultra-high-voltage direct current transmission and photovoltaic industry has made the input voltage of these power electronic products as high as thousands of volts. Due to the limitation of the withstand voltage of switching transistors, topologies such as ordinary forward, flyback, half-bridge, and full-bridge can no longer meet the high-voltage requirements. Enter design requirements. The application of thr...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H03K7/06
Inventor 周耀彬余凤兵开秋月
Owner MORNSUN GUANGZHOU SCI & TECH
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com