Super junction device with deep trench and implant

Abstract

The invention discloses a semiconductor device which has the effect of RESURF (Reduced Surface Field) and comprises deep trenches and relatively deep implants). Also, methods of fabricating such devices are described herein. A RESURF effect device may include alternating regions of first and second conductivity types where each of the second regions includes an implant region formed into a trench region of the second region. The device can ensure quite a low conduction resistance at quite a high withstand voltage and a easy producing.

Description

technical field [0001] The invention discloses a semiconductor device and a manufacturing process thereof, for example, a superjunction device with a deep groove and a deep implantation and a manufacturing process of the device. Background technique [0002] In high-voltage MOSFET devices, it is generally expected to have higher breakdown voltage (Breakdown Voltage, BV) and lower on-resistance (On-resistance, Ron) characteristics. However, both of these characteristics depend on the thickness and resistance of the device's drift region. In general, both eigenvalues ​​increase with decreasing doping concentration or increasing thickness. In order to ensure a lower on-resistance at a higher withstand voltage, a reduced surface field technology (Reduced Surface Field, RESURF) is often used. For example, due to the use of multiple depletion regions between the drift region and the source region, the RESURF device operates with a greatly weakened electric field in the drift reg...

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Problems solved by technology

However, manufacturing the superjunction device 100 is complicated because it is difficult to accurately form the grid in the drift region 11

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