Super junction device with deep trench and implant

A technology of devices and injection regions, which is applied in the manufacture of electric solid devices, semiconductor devices, semiconductor/solid devices, etc., can solve the problems of difficulty in making bars and complexity of super junction devices, and achieve the effects of simplified manufacturing and low on-resistance

Active Publication Date: 2011-08-31
CHENGDU MONOLITHIC POWER SYST
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, manufacturing the superjunction device 100 is complicated because it is difficult to accurately form the grid in the drift region 11

Method used

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  • Super junction device with deep trench and implant
  • Super junction device with deep trench and implant
  • Super junction device with deep trench and implant

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Embodiment Construction

[0035] The present invention will be fully described below with reference to the accompanying drawings. While the present invention has been described in connection with the examples, it should be understood that this is not intended to limit the invention to these examples, but rather, the invention is intended to cover the invention as defined within the spirit and scope of the invention as defined by the appended claims. Various options, modifiables, and equivalents of . Furthermore, in the following detailed description of the present invention, numerous details are set forth for a better understanding of the present invention. However, it will be understood by those skilled in the art that the present invention may be practiced without these specific details. In some other embodiments, well-known schemes, procedures, components and circuits are not described in detail in order to highlight the gist of the present invention.

[0036] figure 2 Shown is a super junction ...

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Abstract

The invention discloses a semiconductor device which has the effect of RESURF (Reduced Surface Field) and comprises deep trenches and relatively deep implants). Also, methods of fabricating such devices are described herein. A RESURF effect device may include alternating regions of first and second conductivity types where each of the second regions includes an implant region formed into a trench region of the second region. The device can ensure quite a low conduction resistance at quite a high withstand voltage and a easy producing.

Description

technical field [0001] The invention discloses a semiconductor device and a manufacturing process thereof, for example, a superjunction device with a deep groove and a deep implantation and a manufacturing process of the device. Background technique [0002] In high-voltage MOSFET devices, it is generally expected to have higher breakdown voltage (Breakdown Voltage, BV) and lower on-resistance (On-resistance, Ron) characteristics. However, both of these characteristics depend on the thickness and resistance of the device's drift region. In general, both eigenvalues ​​increase with decreasing doping concentration or increasing thickness. In order to ensure a lower on-resistance at a higher withstand voltage, a reduced surface field technology (Reduced Surface Field, RESURF) is often used. For example, due to the use of multiple depletion regions between the drift region and the source region, the RESURF device operates with a greatly weakened electric field in the drift reg...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/78H01L29/06H01L21/336H01L21/265
CPCH01L29/407H01L29/0649H01L29/7802H01L29/0634H01L29/0653H01L29/7816H01L2924/0002H01L2924/00
Inventor 李铁生邢正人肖德明
Owner CHENGDU MONOLITHIC POWER SYST
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