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Pixel structure

A pixel structure and pixel electrode technology, applied in optics, instruments, electrical components, etc., can solve problems such as water ripples on the display screen, changes in the capacitance value of SMII storage capacitors, and afterimages.

Active Publication Date: 2011-09-07
AU OPTRONICS CORP
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  • Claims
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Problems solved by technology

However, the semiconductor material will produce conductive properties when illuminated, so parasitic capacitance will be generated between the exposed semiconductor layer and the upper pixel electrode with different operating conditions of different frequencies and voltages, causing the capacitance value of the SMII storage capacitor to change. And cause defects such as water fall or image sticking on the display screen

Method used

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Embodiment Construction

[0047] The present invention will be described in detail below in conjunction with the accompanying drawings and specific embodiments, but not as a limitation of the present invention.

[0048] figure 1 A pixel structure according to an embodiment of the present invention is shown. figure 2 for figure 1 A partial cross-sectional view of the pixel structure. Please also refer to figure 1 and 2 The pixel structure 100 includes a substrate 110 , a scan line 120 , a data line 130 , a thin film transistor 140 , a semiconductor layer 150 , a metal capacitor electrode 160 , a protective layer 170 , a pixel electrode 180 and a transparent capacitor electrode 190 . In particular, the SMII storage capacitor Cst of this embodiment is composed of the semiconductor layer 150 , the metal capacitor electrode 160 , the protective layer 170 and the transparent capacitor electrode 190 .

[0049] In addition, the scan lines 120 and the data lines 130 are disposed on the substrate 110 , and...

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Abstract

The invention relates to a pixel structure including a SMII capacitor structure, which comprises a base plate, a scanning line, a data line, a thin-film transistor, a semiconductor layer, a metal capacitor electrode, a protecting layer, a pixel electrode and a transparent capacitor electrode. A part corresponding to the transparent electrode layer of the semiconductor layer is removed so as to eliminate the parasitic capacitance generated between the transparent electrode layer and the semiconductor layer, prevent water fall or image sticking defects on the display screen and then improve the display quality.

Description

technical field [0001] The present invention relates to a pixel structure, and in particular to a storage capacitor (Cst) having a semiconductor-metal-insulator-indium tin oxide (Semicomductor-Metal-Insulator-ITO, SMII) structure pixel structure. Background technique [0002] A thin film transistor liquid crystal display (TFT LCD) is mainly composed of a thin film transistor array substrate, a color filter array substrate and a liquid crystal layer. The thin film transistor array substrate is composed of a plurality of thin film transistors arranged in an array, and each thin film transistor corresponds to The configuration of the pixel electrode (pixel electrode) is composed. In addition, conventional storage capacitors are usually formed in the pixel structure in order to improve the memory and retention function of the pixel structure for display data. For example, the pixel electrode is covered on the metal capacitor electrode to form an MII storage capacitor. [0003...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/32G02F1/1362
CPCG02F1/1362G02F1/136213H01L27/32G02F2001/13606G02F1/13606
Inventor 张家铭游伟盛张名豪
Owner AU OPTRONICS CORP
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