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Programmable blocking surge protective device

A technology of surge protection devices and resistors, applied in the direction of protection against overvoltage, etc., can solve the problems of not giving system security, repairing damaged equipment, limiting system bandwidth, etc., to facilitate protection design, reduce space occupation, The effect of reducing the failure rate

Inactive Publication Date: 2011-09-07
SHANGHAI CHANGYUAN WAYON MICROELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] (2) Will limit system bandwidth (capacitive loads limit them to low-bandwidth applications);
[0006] (3) A complex design consisting of multiple components is required, resulting in a high failure rate;
[0007] (4) Often require a larger space;
[0008] (5) For the protection design scheme, the unit cost is high
Unfortunately, due to many problems in parallel protection, the current surge protection technology still cannot give sufficient safety guarantees for such systems
The result is costly companies in lost productivity and repairs to damaged equipment

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0065] see figure 1 As shown in the schematic diagram of the circuit structure of Embodiment 1 of the present invention, a bidirectional blocking surge protection device 10 is composed of a first depletion-type field-effect transistor Q1 (depletion-type N-channel metal-oxide-semiconductor field-effect transistor NMOSFET), the second depletion mode field effect transistor Q2 (depletion mode N-channel metal oxide semiconductor field effect transistor NMOSFET), the third depletion mode field effect transistor Q3 (depletion mode P-channel junction field effect transistor PJFET), the first resistance R1 (constant current source resistance), the second resistance R2 (constant current source resistance) and the external resistance (Rex) constitute the conduction path of the series structure, forming a circuit module, wherein:

[0066] The drain D of the first depletion-type field-effect transistor Q1 is connected to the input terminal of the module, the source S is connected to the f...

Embodiment 2

[0079] see figure 2 As shown in the schematic diagram of the circuit structure of Embodiment 2 of the present invention, as an improvement to the surge protection device of Embodiment 1, the surge protection device 20 adds a third resistor R3 (bias resistor), and the third resistor R3 is connected in parallel Between the source S and the drain D of the third depletion-type field effect transistor Q3, that is, the third resistor R3 is connected to the source S of the depletion-type N-channel field-effect transistor Q1 and the depletion-type N-channel field-effect transistor Q2 The source S.

[0080] After any one of the first depletion type field effect transistor Q1 and the second depletion type field effect transistor Q2 is turned off, the third resistor R3 is the source S of the first depletion type field effect transistor Q1 or the second depletion The source S of the exhaust-type field effect transistor Q2 provides a stable potential to prevent this node from being float...

Embodiment 3

[0082] see image 3 As shown in the schematic diagram of the circuit structure of Embodiment 3 of the present invention, as an improvement on the surge protection device of Embodiment 1, the surge protection device 30 also includes a first feedback voltage divider R and a second feedback voltage divider R ',in,

[0083] The first feedback voltage divider R is composed of a fourth resistor R4 and a fifth resistor R5 in series, and the middle node of the first feedback voltage divider R is between the fourth resistor R4 and the fifth resistor R5; the second feedback voltage divider R ' is composed of the sixth resistor R6 and the seventh resistor R7, and the middle node of the second feedback voltage divider R' is between the sixth resistor R6 and the seventh resistor R7.

[0084] The first feedback voltage divider R is connected in parallel between the drain D of the third depletion field effect transistor Q3 and the first input terminal of the external resistor Rex, and the mid...

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PUM

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Abstract

The invention relates to a programmable blocking surge protective device, comprising a serially-connected conducting path which is formed by a first dependent mode field effect transistor, a second dependent mode field effect transistor and a third dependent mode field effect transistor, a first resistor, a second resistor and an external resistor, wherein the drain electrode of the first dependent mode field effect transistor is connected with an input end of a module and the source electrode of the first dependent mode field effect transistor is connected with a first access end of the external resistor as well as the grid electrode of the first dependent mode field effect transistor is connected with the source electrode of the second dependent mode field effect transistor; the drain electrode of the second dependent mode field effect transistor is connected with an output end of the module, the source electrode of the second dependent mode field effect transistor is connected with the drain electrode of the third dependent mode field effect transistor, and the grid electrode of the second dependent mode field effect transistor is connected with the source electrode of the first dependent mode field effect transistor; the source electrode of the third dependent mode field effect transistor is connected with a second access end of the external resistor, and the grid electrode of the third dependent mode field effect transistor is connected with the first resistor and the second resistor respectively; and the other end of the first resistor is connected with the input end of the module and the other end of the second resistor is connected with the output end of the module. The programmable blocking surge protective device is similar to a variable resistance circuit capable of reconfiguring fuse wires, thus realizing the programmable application of device trigger current and promoting the flexible application of the protective device.

Description

technical field [0001] The programmable blocking type surge protection device of the invention relates to a semiconductor device and relates to the technical field of semiconductor surge protection devices. Background technique [0002] Power surge or transient overvoltage is defined as a voltage that significantly exceeds the design value in an electronic circuit. It mainly includes lightning strikes, power line laps, power line induction, or ground bounce. When the power surge is high enough, transient overvoltages can cause serious damage to electronic equipment such as computers and phones. It also results in reduced equipment life. [0003] Transient voltage surge suppressors limit the energy of electrical surges that couple to equipment, thereby protecting electronic equipment from damage. Products in this category include surge protection thyristors, oxide varistors and avalanche diodes. Both types of devices are connected in parallel in the protected circuit, and ...

Claims

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Application Information

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IPC IPC(8): H02H3/20
Inventor 苏海伟张关保王永录叶力吴兴农
Owner SHANGHAI CHANGYUAN WAYON MICROELECTRONICS