Highly-efficient radiation high-power light emitting diode (LED) packaging structure

An LED packaging and high-power technology, applied in electrical components, electrical solid devices, circuits, etc., can solve the problems of low LED light output rate, poor LED heat dissipation effect, and influence LED service life, etc., to increase the heat dissipation area and reduce the luminous Cost, simple and compact structure

Inactive Publication Date: 2011-09-14
王海军
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] At present, in the packaging structure of high-power LEDs, the light output rate of LEDs is not high, and the heat dissipation effect of LEDs is poor, which affects the service life of LEDs.

Method used

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  • Highly-efficient radiation high-power light emitting diode (LED) packaging structure
  • Highly-efficient radiation high-power light emitting diode (LED) packaging structure

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Experimental program
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Embodiment Construction

[0014] The present invention will be further described below in conjunction with specific drawings and embodiments.

[0015] like figure 1 As shown: the present invention includes a transparent substrate 1 , an LED light-emitting chip 2 , a heat dissipation cavity 3 , a heat dissipation substrate 4 and a bottom plate 5 .

[0016] like figure 1 As shown: In order to efficiently dissipate the heat of the LED light-emitting chip 2 during work, the LED light-emitting chip 2 is installed on the bottom plate 5, and the bottom plate 5 is provided with a transparent substrate 1 corresponding to the side where the LED light-emitting chip 2 is arranged. The substrate 1 is pressed and covered with the LED light-emitting chip 2 . The transparent substrate 1 is pressed and covered on the LED light-emitting chip 2, which can conduct the heat of the LED light-emitting chip 2 in a timely and effective manner. The material of the transparent substrate 1 includes transparent ceramics, magnesi...

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Abstract

The invention relates to a highly-efficient radiation high-power light emitting diode (LED) packaging structure. According to the technical scheme provided by the invention, the highly-efficient radiation high-power LED packaging structure comprises a transparent substrate and a bottom plate; a plurality of LED luminous chips are arranged on the bottom plate; and the transparent substrate is positioned on the side, provided with the LED luminous chips, of the bottom plate, and is covered on the LED luminous chips in a pressing way. In the highly-efficient radiation high-power LED packaging structure, the LED luminous chips are arranged between the transparent substrate and the bottom plate, and can form a single-layer or multi-layer structure; radiation substrates are arranged on the two sides of the LED luminous chips, adopt silvered plates or silver plates, and have high thermal conductivity; the transparent substrate, the radiation substrates and the bottom plate can dissipate the working heat of the LED luminous chips at the same time so as to increase a radiation area, prolong the service life of the LED luminous chips and reduce light emitting cost, and may not influence the light emitting rate of the LED luminous chips 2; and the highly-efficient radiation high-power LED packaging structure is simple and compact, convenient to arrange and use, safe and reliable.

Description

technical field [0001] The invention relates to an LED packaging structure, in particular to a high-power LED packaging structure with efficient heat dissipation, and belongs to the technical field of LED packaging. Background technique [0002] At present, with the development of LED material epitaxy and chip technology, LED has shown a good application prospect, especially high-power LED, its application field has been continuously expanded, and has been widely used in landscape lighting, miner's lamp, street lamp, emergency street lamp and other fields. [0003] LED is a special kind of diode. Its core part is a chip composed of P-type semiconductor and N-type semiconductor. These semiconductor materials are pre-produced by implantation or doping processes to produce a P / N junction structure. In the P / N junction of some semiconductor materials, the current in the LED can easily flow from the P pole to the N pole, and two different carriers, namely holes and electrons, flo...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/64H01L25/075
Inventor 王海军
Owner 王海军
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