Ion implantation system and method

Abstract

The invention discloses an ion implantation system. The system comprises an ion source and an extractor, wherein a mass analyzing magnet, a correcting magnet and a workpiece scanning device are arranged on the transmission path of the ion beams in sequence. The system also comprises a scanning magnet arranged on the upper stream of the correcting magnet and a beam current measuring device arranged in the implantation position, wherein the scanning magnet is used for scanning the passing ion beams so as to ensure distribution of the ion beams which are arranged in the implantation position and in the preset energy range in the ion beam scanning direction to cover the workpiece; and the beam current measuring device is used for measuring the intensity and angle distribution of the beam current in the scanning direction of the ion beams. The invention also discloses an ion implantation method realized by the ion implantation system. The system and the method have the following positive effects: accurate control of the implantation angle uniformity and implantation intensity uniformity of the ion beams can be realized; the production cost is lowered; and the process flows are simplified.

Description

technical field [0001] The invention relates to an ion implantation system, in particular to an ion implantation system and method. Background technique [0002] Ion implantation is used to introduce atoms or molecules, commonly referred to as impurities, into a target substrate, thereby changing the properties of the substrate material. Ion implantation is not only a conventional process used in the modern integrated circuit manufacturing industry, but it can also be used in the manufacture of optical devices or display devices such as flat-panel displays, as well as the deposition of thin films with controllable thickness and predetermined surface properties. [0003] In some applications, especially when a 300mm or 450mm wafer or even a larger substrate is used as the implantation target, it is preferable to use a ribbon ion beam for implantation. figure 1 and figure 2 All shown are existing ion implantation systems using ribbon ion beams for implantation. exist figu...

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Problems solved by technology

[0008] The technical problem to be solved by the present invention is to overcome the defects that the ion implantation method in the prior art is difficult to simultaneously ensure the dose uniformity and angle uniformity of the beam, and the cost is high and the process is complicated, and to provide a method that can simultaneously realize the beam current Dose uniformity and angle uniformity, and ion implantation system and method with low cost and simple process

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