Unlock instant, AI-driven research and patent intelligence for your innovation.

Semiconductor device and manufacturing method thereof

A device manufacturing method and semiconductor technology, which are applied in semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc., can solve problems such as the increase in the number of processes

Inactive Publication Date: 2011-09-28
FUJITSU SEMICON LTD
View PDF8 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] However, there is a problem that if multiple transistors with significantly different withstand voltages are mounted on the same substrate, it will result in an increase in the number of processes

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor device and manufacturing method thereof
  • Semiconductor device and manufacturing method thereof
  • Semiconductor device and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0066] refer to Figures 1A to 19 A semiconductor device and a method of manufacturing the same according to Embodiment 1 are described.

[0067] (Semiconductor device)

[0068] First, refer to Figure 1A and Figure 1B as well as Figure 2A and Figure 2B The semiconductor device according to this embodiment is described. Figure 1A and Figure 1B is a cross-sectional view showing the semiconductor device according to the embodiment. Figure 1A The space on the left side of the middle shows the area where the transistors of the core components are formed (core transistor forming area) 2, Figure 1A The space on the right side of the center shows a region (input / output transistor forming region) 4 in which transistors of the input / output circuit are formed. Figure 1B A region (power amplifier circuit forming region) 6 where a power amplifier circuit is formed is shown. Figure 1B The space on the left side of the middle shows a region (pre-stage transistor formation regi...

Embodiment 2

[0307] refer to 36A to 40 A semiconductor device and a method of manufacturing the same according to Embodiment 2 are described. with the basis 1A to 35B The same components of the semiconductor device and the manufacturing method thereof of the first embodiment are denoted by the same reference numerals, and the description thereof will be omitted or simplified.

[0308] (Semiconductor device)

[0309] First, refer to Figure 36A and Figure 36B The semiconductor device according to this embodiment is described. Figure 36A and Figure 36B is a cross-sectional view showing the semiconductor device according to the embodiment.

[0310] The main feature of the semiconductor device according to this embodiment is that the P-type well 14e of the high withstand voltage transistor forming region 6B is not separated from the region where the low concentration drain region 28h is formed.

[0311] The P-type well 14e of the high withstand voltage transistor forming region 6B ...

Embodiment 3

[0342] refer to 41A to 43B A semiconductor device and a method of manufacturing the same according to Embodiment 3 are described. with the basis Figures 1A to 40 The same components of the semiconductor device and the manufacturing method thereof of the first embodiment and the second embodiment are denoted by the same reference numerals, and the description thereof will be omitted or simplified.

[0343] (Semiconductor device)

[0344] First refer to Figure 41A and Figure 41B The semiconductor device according to this embodiment is described. Figure 41A and Figure 41B is a cross-sectional view showing the semiconductor device according to the embodiment.

[0345] The main feature of the semiconductor device according to this embodiment is that the channel doping layer 22e of the high withstand voltage transistor forming region 6B is not separated from the region where the low concentration drain region 28h is formed.

[0346] With this embodiment, the channel dop...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

A semiconductor device manufacturing method includes forming a channel dope layer having a first electric conductive-type inside of a semiconductor substrate, the channel dope layer being formed in a region except for a drain impurity region where dopant impurities for forming a low-concentration drain region are introduced, and the channel dope layer being separated from the drain impurity region; forming a gate electrode on the semiconductor substrate via a gate insulating film; and forming a low-concentration source region inside of the semiconductor substrate on a first side of the gate electrode, and forming a low-concentration drain region in the drain impurity region of the semiconductor substrate on a second side of the gate electrode, by introducing second electric conductive dopant impurities inside of the semiconductor substrate with the gate electrode as a mask.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS [0002] The present application is based on, and claims priority to, Japanese Patent Application No. 2010-066443 filed on March 23, 2010, the contents of which are incorporated by reference in their entirety. technical field [0003] The present invention relates to a semiconductor device and a manufacturing method thereof. Background technique [0004] Recently, there are demands for further integration, size reduction, cost reduction, and the like of mobile phones, wireless communication terminal devices, and the like. [0005] Accordingly, a semiconductor device in which a core portion, an input / output circuit, a power amplifier circuit, and the like are mounted on the same semiconductor substrate has attracted attention. [0006] The transistors of the core part or the input / output circuit part may be formed by a general CMOS process. [0007] On the other hand, a voltage of about three times the gate bias voltage may be ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/8238H01L27/092G03F1/14H01L21/28H01L21/336H01L21/8234H01L27/088H01L29/78
CPCH01L27/0922H01L21/823807H01L21/823814H01L21/82385H01L21/823456H01L21/823892H01L21/823493H01L21/823418H01L21/823412
Inventor 岛昌司
Owner FUJITSU SEMICON LTD