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Capacitor

A capacitor and electrode technology, applied in the field of on-chip capacitors, can solve the problems of not being used and the voltage coefficient is large, and achieve the effect of increasing the capacitance density and increasing the capacitance value

Inactive Publication Date: 2011-09-28
VIMICRO CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

MOS capacitors are generally not used in high linearity applications due to their large voltage coefficients.

Method used

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Embodiment Construction

[0035] The detailed description of the present invention directly or indirectly simulates the operation of the technical solution of the present invention mainly through programs, steps, logic blocks, processes or other symbolic descriptions. In the ensuing description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. Rather, the invention may be practiced without these specific details. These descriptions and representations herein are used by those skilled in the art to effectively convey the substance of their work to others skilled in the art. In other words, for the purpose of avoiding obscuring the present invention, well-known methods, procedures, components and circuits have not been described in detail since they are readily understood.

[0036] Reference herein to "one embodiment" or "an embodiment" refers to a particular feature, structure or characteristic that can be included in at least one implementa...

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Abstract

The invention provides a capacitor which comprises a first conductive part, a second conductive part, a third conductive part, a fourth conductive part, a fifth conductive part and a sixth conductive part. The first conductive part and the second conductive part are formed on a first layer and spaced from each other; the third conductive part and the fourth conductive part are formed on a second layer and spaced from each other; the fifth conductive part and the sixth conductive part are formed on a third layer and spaced from each other; since the third and fourth conductive parts arranged in the middle layer have large thickness, a large relative area is formed, and large capacitance is generated at the middle layer, thereby greatly enhancing the capacitance value, and further improving the density of capacitors in unit wafer area.

Description

【Technical field】 [0001] The invention relates to the field of capacitors, in particular to a capacitor on chip. 【Background technique】 [0002] Capacitors are widely used in various circuit designs. Generally speaking, on-chip capacitors include MOS capacitors, PIP (Poly-Isolation-Poly) capacitors, MIM (Metal-Isolation-Metal) capacitors, and MOM (Metal-Oxidation-Metal) capacitors. In deep submicron and nanometer processes, PIP capacitors and MIM capacitors require additional masks and process steps, and the production costs are high. Although their voltage coefficients are small, they are generally not used. MOS capacitors are generally not used in high linearity applications due to their large voltage coefficients. MOM capacitors have a good voltage coefficient and are fully compatible with standard processes, so they are usually used. [0003] U.S. Patent No. 6,980,414 (reference document 1) published on December 27, 2005 discloses a MOM capacitor. Figure 4A and Fig...

Claims

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Application Information

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IPC IPC(8): H01L27/08H01L29/92
Inventor 王钊
Owner VIMICRO CORP