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Semiconductor-device driving circuit, and semiconductor apparatus having the same

A technology for driving circuits and semiconductors, which is used in semiconductor devices, output power conversion devices, circuits, etc.

Inactive Publication Date: 2011-09-28
PANASONIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, in Figure 16 In the configuration of the conventional power semiconductor device shown, the voltage and current become zero immediately after the output transistor is turned off due to an abnormal state. Possibility of repetition of cut-off operation and driving operation such as cut-off operation due to overvoltage, over-current, and excessive power consumption

Method used

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  • Semiconductor-device driving circuit, and semiconductor apparatus having the same
  • Semiconductor-device driving circuit, and semiconductor apparatus having the same
  • Semiconductor-device driving circuit, and semiconductor apparatus having the same

Examples

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Embodiment approach 1

[0081] figure 1 It is a block diagram showing a drive circuit according to Embodiment 1 of the present invention and a circuit configuration of a semiconductor device including the drive circuit. exist figure 1 Among them, the switching element 1 that is a semiconductor element that is driven and controlled by the driving circuit of the first embodiment is an FET using a p-type region for a gate. Here, the "FET using a p-type region for the gate" is a FET composed of a semiconductor stacked structure, a p-type semiconductor layer is in contact with the semiconductor stacked structure, and the p-type semiconductor layer is used as the gate electrode. the FET. In addition, in the semiconductor multilayer structure, although the portion in contact with the p-type semiconductor layer is undoped, it may be n-type or p-type. The semiconductor stacked structure in Embodiment 1 is, for example, a nitride semiconductor.

[0082] In the switching element 1 of the drive circuit acc...

Embodiment approach 2

[0125] Figure 5 It is a block diagram showing a drive circuit according to Embodiment 2 of the present invention and a circuit configuration of a semiconductor device including the drive circuit. In addition, in Embodiment 2, the switching element 1, which is a semiconductor element driven and controlled by the drive circuit, is described using a FET using a p-type region for the gate, but using a Schottky electrode for the gate It is self-evident that the same effect can be achieved in FETs and other semiconductor elements. In the following description of Embodiment 2, elements having the same functions and configurations as those in the driving circuit and semiconductor device of Embodiment 1 described above are assigned the same reference numerals, and description thereof will be omitted.

[0126] exist Figure 5 In FIG. 1 , a gate control unit 12 as a gate control unit is connected to the gate of the switching element 1 using a p-type region FET as the gate. In additio...

Embodiment approach 3

[0154] Figure 9 It is a block diagram showing a drive circuit according to Embodiment 3 of the present invention and a circuit configuration of a semiconductor device including the drive circuit. Also in Embodiment 3, the switching element 1 which is a semiconductor element which is driven and controlled by a drive circuit is described using a FET using a p-type region for the gate, but the switching element 1 using a Schottky electrode for the gate It is self-evident that the same effect can be obtained in FET and other semiconductor elements. In the following description of Embodiment 3, elements having the same functions and configurations as those in the driving circuit and semiconductor device of Embodiments 1 and 2 described above are assigned the same reference numerals, and description thereof will be omitted.

[0155] In the drive circuit of Embodiment 3, the voltage detection unit 4 in the drive circuit of Embodiment 1 and the current detection unit 5 in Embodiment...

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Abstract

It is an object of the present invention to provide a driving circuit which is adapted, for a semiconductor device which exhibits a diode characteristic of flowing an abrupt current if the gate-source voltage therein exceeds a predetermined voltage, to have the functions of reducing electric-power consumption in high-load state, reducing the loss in the driving circuit in low-load states, preventing excessive voltages, excessive currents and excessive electric-power consumption, and reducing the loss in the semiconductor device. A gate control part (2, 12, 22, 32) in a driving circuit is adapted to control the voltage or the current which is supplied to the gate of a semiconductor device, according to signals indicative of operation states of the semiconductor device (1), wherein these signals are inputted from an operation-state detection part (4, 5, 6) which detects operation states of the semiconductor device, and the semiconductor device exhibits a diode characteristic of flowing an abrupt current if the gate-source voltage therein exceeds a predetermined voltage.

Description

technical field [0001] The present invention relates to a driving circuit for a field effect transistor (FET: Field Effect transistor) using a p-type region for a gate or an electrode having a Schottky junction, and a semiconductor device having the driving circuit. Protective function of semiconductor elements against overvoltage, overcurrent, and overpower in the on-state. Background technique [0002] In recent years, FETs using GaN-based compound semiconductor elements have attracted attention as power semiconductor elements. Such GaN-based FETs have better material properties than conventional Si-based semiconductor devices and the like, and may reduce power consumption to a fraction of that of Si-based MOSFETs, for example. However, in GaN-based FETs using a p-type region for the gate, there is a problem that element loss increases with an increase in the drain-source voltage (Vds). Moreover, even in a FET using an electrode having a Schottky junction, there is a sim...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H02M1/08H02M3/155
CPCH03K17/302H03K17/0822
Inventor 长濑久典中村尚幸玉冈修二
Owner PANASONIC CORP
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