Method for preparing local oxidization termination ring of semiconductor device

A local oxidation and semiconductor technology, which is applied in the manufacture of semiconductor/solid-state devices, electrical components, circuits, etc., can solve the problems of insufficient thickness, affecting the breakdown performance of semiconductor high-voltage devices, etc., and achieve the effect of improving breakdown performance
CN102208334AActive Publication Date: 2011-10-05SHANGHAI HUAHONG GRACE SEMICON MFG CORP
3 Cites 6 Cited by

Patent Information

Authority / Receiving Office
CN Β· China
Patent Type
Applications(China)
Current Assignee / Owner
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
Publication Date
2011-10-05

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

The invention relates to a method for preparing a local oxidization termination ring of a semiconductor device, which comprises the following steps of: forming a pad oxide layer and a silicon nitride layer in an edge zone of the semiconductor device on a silicon substrate; etching the pad oxide layer, the silicon nitride layer and the silicon substrate to form a plurality of grooves; carrying out local oxidation on silicon in the grooves to form a field oxide layer; and removing the pad oxide layer and the silicon nitride layer. The local oxide termination ring of the semiconductor device, which is prepared by adopting the method, has high breakdown voltage and can well improve the breakdown property of the semiconductor device.
Need to check novelty before this filing date? Find Prior Art

Description

technical field

[0001] The invention relates to a method for preparing a local oxidation termination ring (LOCOS Termination) of a semiconductor device, in particular to a preparation method for a deep layer (Buried) local oxidation termination ring of a high-voltage semiconductor device. Background technique

[0002] In the manufacturing process of modern semiconductor devices, the breakdown resistance (Breakdown) performance of semiconductor devices is more and more expected by people. In order to improve the breakdown voltage (Breakdown Voltage, BV) of the semiconductor device, the semiconductor device has a termination ring (Termination) structure, which surrounds the active area of ​​the semiconductor device, so as to prevent the edge part of the semiconductor device from being broken down early. Termination rings in the prior art are usually formed by local oxidation. However, the thickness of the Field Oxide (FOX) layer formed by the local oxidation method in the prio...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More