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MOCVD (Metal-organic Chemical Vapor Deposition) system with multiple extensional reaction cavities and operation method thereof

An operation method and reaction chamber technology, applied in the field of MOCVD systems, can solve the problems of inability to meet the needs of large-scale epitaxial substrate production, increase costs and operating costs, and low output, so as to prolong the cleaning and maintenance cycle, shorten the Preparation time, the effect of increasing production

Active Publication Date: 2012-08-22
JIANGSU ZHONGSHENG SEMICON EQUIP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] However, the above two existing MOCVD systems for production are only provided with a single epitaxial reaction chamber, the output is low, and cannot meet the production needs of large-scale epitaxial substrate substrates; , transfer stations, loading and unloading platforms and other equipment, it increases the cost of unit manufacturing and operating costs

Method used

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  • MOCVD (Metal-organic Chemical Vapor Deposition) system with multiple extensional reaction cavities and operation method thereof

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Embodiment 1

[0054] Please refer to image 3 , Figure 4 As shown, the MOCVD system with multiple epitaxial reaction chambers involved in this embodiment includes a transfer chamber 20 provided with a manipulator 21, and equal to or more than two epitaxial reaction chambers 10 connected to the transfer chamber 20, and also includes a A transfer station 30 connected to the transfer chamber 20 , and a loading and unloading platform 40 connected to the transfer station 30 . A vacuum isolation valve 51 is provided between the transfer chamber 20 and each epitaxial reaction chamber 10; a vacuum isolation valve 52 is provided between the transfer chamber 20 and the transfer station 30, and a vacuum isolation valve 53 is provided between the transfer station 30 and the loading and unloading station 40 .

[0055] Such as image 3 Shown is an MOCVD system with two epitaxial reactor chambers; Figure 4 Shown is an MOCVD system with three epitaxial reactor chambers. The maximum number of epitaxi...

Embodiment 2

[0064] Such as Figure 5 As shown, the MOCVD system involved in this embodiment is configured with two epitaxial reaction chambers 10 as an example, which is similar in structure to the above embodiment, including a transfer chamber 20 provided with a manipulator 21, and a transfer chamber 20 connected to Two epitaxial reaction chambers 10 . The difference is that it also includes two transfer stations 30 connected to the transfer chamber 20 , and each transfer station 30 is also connected to a loading and unloading platform 40 .

[0065] Similar to the above embodiments, a vacuum isolation valve 51 is provided between the transfer chamber 20 and each epitaxial reaction chamber 10 ; a vacuum isolation valve 53 is provided between the transfer station 30 and the loading and unloading station 40 . The vacuum isolation valve 52 between the transfer chamber 20 and the transfer station 30 ( Figure 5 Indicated by the dotted line) can be set or removed according to requirements. ...

Embodiment 3

[0070] Such as Figure 6 As shown, this embodiment relates to a MOCVD system with multiple epitaxial reaction chambers, which is similar in structure to the above embodiment, including a transfer chamber 20 provided with a manipulator 21, and several transfer stations 30 connected to the transfer chamber 20 and multiple An epitaxial reaction chamber 10.

[0071] The difference lies in that the transfer chamber 20 in this embodiment is polygonal, so that it can be connected with more epitaxial reaction chambers 10 or transfer stations 30 . by Figure 6 As an example, the transfer chamber 20 is hexagonal, and it is respectively connected with two transfer stations 30 and three epitaxial reaction chambers 10 ; each transfer station 30 is also connected with a loading and unloading station 40 .

[0072] Similar to the above embodiments, a vacuum isolation valve 51 is provided between the transfer chamber 20 and each epitaxial reaction chamber 10 ; a vacuum isolation valve 53 is ...

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Abstract

The invention discloses an MOCVD (Metal-organic Chemical Vapor Deposition) system with multiple extensional reaction cavities, and the system provided by the invention is used for carrying out extensional reaction on a plurality of substrates arranged on a tray. The MOCVD system comprises a transmission cavity provided with a mechanical arm, a plurality of transit stations and at least two extensional reaction cavities, wherein the plurality of transit stations are connected with the transmission cavity; the substrates can be simultaneously subjected to extensional reaction in the extensionalreaction cavities; and according to mechanical automation operation, the trays in the extensional reaction cavities can be taken out and put in without opening extensional reaction cavity covers, thereby improving the system capacity, saving the time for cooling the extensional reaction cavities and changing trays, and improving the production use ratio of equipment. Because the plurality of extensional reaction cavities share one set of transmission cavity, mechanical arm and the like, one and several other sets of corresponding equipment are saved, the setup cost and operation cost are lowered, and installing sites of the equipment are saved. Because the transit stations have the function of a pre-processing cavity, the tray can be precooled and preheated according to the production requirement so as to further improve the production efficiency.

Description

technical field [0001] The invention relates to a MOCVD (metal organic chemical vapor deposition) system and its operating method for producing compound semiconductor optoelectronic devices, in particular to an MOCVD system with multiple epitaxial reaction chambers and its operating method. Background technique [0002] Metal-organic chemical vapor deposition system (hereinafter referred to as MOCVD system) is the core equipment used to produce semiconductor optoelectronic devices. The substrate substrate is grown in the MOCVD chamber through the epitaxial process structure to form a specialized optoelectronic device structure. Currently, MOCVD is It is widely used in the production of LED epitaxial wafers, high-power lasers and high-efficiency solar cells. [0003] In the past, due to market and technical reasons, the requirements for the output of epitaxial wafers were not high, and MOCVD equipment was designed for small-scale production. Such as figure 1 As shown, it is...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/205C30B25/02C23C16/44
CPCC23C16/54C30B35/00C30B25/02
Inventor 陈爱华金小亮孙仁君张伟
Owner JIANGSU ZHONGSHENG SEMICON EQUIP
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