Semiconductor structure with suspended sources and drains as well as formation method thereof
A semiconductor and multi-layer structure technology, which is applied in semiconductor devices, semiconductor/solid-state device manufacturing, transistors, etc., can solve the problems of transition layer thickness, high defect density, and affecting device performance, so as to improve performance and reduce parasitic junction capacitance , The effect of suppressing leakage
Active Publication Date: 2011-10-12
TSINGHUA UNIV
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However, the current transition layer is relatively thick, and the defect density is high, which seriously affects the performance of the device.
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[0027] Embodiments of the present invention are described in detail below, examples of which are shown in the drawings, wherein the same or similar reference numerals designate the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the figures are exemplary only for explaining the present invention and should not be construed as limiting the present invention.
[0028] The following disclosure provides many different embodiments or examples for implementing different structures of the present invention. To simplify the disclosure of the present invention, components and arrangements of specific examples are described below. Of course, they are only examples and are not intended to limit the invention. Furthermore, the present invention may repeat reference numerals and / or letters in different instances. This repetition is for the purpose of simplicity and clarity and does not in itself indicat...
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The invention provides a semiconductor structure, comprising a Si substrate, a plurality of raised structures formed on the Si substrate, suspended thin films, transition layers, III-V compound material layers with high mobility on the transition layers, grid stacks on the III-V compound material layers as well as sources and drains formed in the III-V compound material layers, wherein a gap exists between every two raised structures; and one suspended thin film is formed between every two raised structures and connected with the tops of the two raised structures. Because a first semiconductor material thin film is very thin, dislocation densities between the first semiconductor material thin film and the transition layers can be reduced greatly. In addition, the raised structures can release parts of thermal mismatch stress, so the growth quality of the transition layers can be ensured and the transition layers can be thinner.
Description
technical field [0001] The invention relates to the technical field of semiconductor design and manufacture, in particular to a semiconductor structure with suspended sources and drains and a forming method thereof. Background technique [0002] For a long time, in order to obtain higher chip density, faster working speed and lower power consumption. The feature size of Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) has been continuously scaling down in accordance with the so-called Moore's law, and their operating speeds are getting faster and faster. At present, it has entered the range of nanoscale. However, a serious challenge that comes with it is the short channel effect, such as subthreshold voltage drop (Vtroll-off), drain-induced barrier lowering (DIBL), source-drain punch through, etc. The off-state leakage current of the device is significantly increased, resulting in performance degradation. In addition, for devices using III-V compound materials...
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IPC IPC(8): H01L29/06H01L29/24H01L27/088H01L21/8234
CPCH01L21/764H01L21/823412H01L21/823418H01L21/823481H01L29/66431H01L29/778
Inventor 王敬郭磊
Owner TSINGHUA UNIV