Scale-span design method for interface structure of micro/nano/photoelectronic device
Patent Information
- Authority / Receiving Office
- CN · China
- Current Assignee / Owner
- JIANGSU UNIV
- Publication Date
- 2011-10-19
- Estimated Expiration
- Not applicable · inactive patent
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Abstract
Description
technical field
[0001] The invention relates to microscopic to macroscopic numerical simulation, in particular to a cross-scale coupling design method for the microstructure interface of micro / nano / optoelectronic devices. Background technique
[0002] Multi-layer structures and multi-interfaces are ubiquitous phenomena in electronic devices themselves as well as in device interconnection and packaging. Interface delamination failure has become an important concern in product performance and reliability. Foreign researchers have found through a large number of experiments that the interface is a key part in the manufacture and operation of microsystems, and many damages and defects occur near the interface. However, the research on the interface law of microscopic materials has just started, and the macroscopic theory based on continuum mechanics is no longer applicable. The physical characteristics of the interface are not only related to the geometry of the microstructure ...