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Scale-span design method for interface structure of micro/nano/photoelectronic device

A technology of optoelectronic devices and interface structures, which is applied in the fields of instruments, computing, and electrical digital data processing, etc., can solve the problems of insufficient, increased computing time, huge time, etc., and achieve the effect of high efficiency and solving design problems

Inactive Publication Date: 2011-10-19
JIANGSU UNIV
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Problems solved by technology

However, the disadvantage of molecular dynamics simulation is that the calculation requires a huge amount of time, and its calculation time increases sharply with the increase of the number of atoms. Can only simulate 10 9 Atom, that is, a material less than 1 square micron, such a scale range is obviously not enough for the simulation of crack growth, energy impact, etc.

Method used

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  • Scale-span design method for interface structure of micro/nano/photoelectronic device

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Embodiment

[0028] at a thickness of 2 umThe temperature boundary conditions of -500K and 500K were applied to both ends of the Cu thin film respectively. According to the flow chart of cross-scale design, firstly, in the FE Area (FE Area, A FE ), use the finite element method to discretize it and solve its stiffness matrix and load array, and impose the upper and lower temperature boundary conditions: -500K, 500K, which is the second step in the above specific implementation steps; secondly, use the transition Interface element method, the results of the finite element solution are linked with the interface element, and the solution of the interface element area is calculated; then, the obtained solution is applied to the interface area (ISE Area, A ISE ), and use it as the initial condition of the non-equilibrium molecular dynamics simulation in the molecular dynamics model to solve the calculation, which is the third step in the above specific implementation steps; after the solution...

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Abstract

The invention discloses a scale-span design method for an interface structure of a micro / nano / photoelectronic device, which comprises the following steps of: designing a coupling area of a finite element and an interface element, and an interface element coupling area of molecular dynamics; constructing a finite element, interface element and molecular dynamics coupled model; solving a finite element equation in the finite element area by using a finite element method, and converting the finite element equation to a boundary of the interface element area to solve the interface element area; assigning atoms in the finite element coupling area of the molecular dynamics and converting the solution of the finite element area into a boundary condition of the atoms in the molecular dynamics area; initiating molecular dynamics solving in the molecular dynamics area, and solving new positions of atoms by using a non-equilibrium molecular dynamics model; and finally determining system balance of the molecular dynamics area. By the method, the energy coupled transfer is realized systematically, the macro / micro / nano simulation of interface characteristics of the micro / nano / photoelectronic device is realized, and the method has the characteristics of precision, scientific property and high efficiency.

Description

technical field [0001] The invention relates to microscopic to macroscopic numerical simulation, in particular to a cross-scale coupling design method for the microstructure interface of micro / nano / optoelectronic devices. Background technique [0002] Multi-layer structures and multi-interfaces are ubiquitous phenomena in electronic devices themselves as well as in device interconnection and packaging. Interface delamination failure has become an important concern in product performance and reliability. Foreign researchers have found through a large number of experiments that the interface is a key part in the manufacture and operation of microsystems, and many damages and defects occur near the interface. However, the research on the interface law of microscopic materials has just started, and the macroscopic theory based on continuum mechanics is no longer applicable. The physical characteristics of the interface are not only related to the geometry of the microstructure ...

Claims

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Application Information

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IPC IPC(8): G06F17/50
Inventor 杨平张立强谢方伟李培宋喜福席涛于新刚王晓亮王欢
Owner JIANGSU UNIV
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