Method for detecting bottom outline of contact plug
A detection method and technology for contact plugs, which are used in semiconductor/solid-state device testing/measurement, electrical components, semiconductor/solid-state device manufacturing, etc., can solve problems such as inability to obtain photos and inability to obtain contact plug bottom contour detection results, etc. Achieve the effect of reducing charge capture effect, good test environment and reducing detection error
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no. 1 example
[0042] refer to Figure 5A , first provide a wafer; the wafer includes: a semiconductor substrate 21 formed with an active region 22; a first dielectric layer 23 located on the semiconductor substrate 21; through the first dielectric layer 23 and with the active The contact plug 24 electrically connected to the source region 22; the second dielectric layer 25 formed on the first dielectric layer 23 and the contact plug 24; and penetrating through the second dielectric layer 25 and in contact with the Plug 24 is electrically connected to metal layer 26 .
[0043] Wherein, the material of the first dielectric layer 23 and the second dielectric layer 25 is one of silicon oxide or silicon nitride or a combination thereof, and the material of the contact plug 24 is tungsten, copper, or aluminum, The contact plug 24 may be a trapezoidal plug.
[0044] refer to Figure 5B , the metal layer 26 and the second dielectric layer 25 are removed by chemical mechanical polishing.
[0045...
no. 2 example
[0054] refer to Figure 6A , first provide a wafer; the wafer includes: a semiconductor substrate 31 formed with an active region 32; a first dielectric layer 33 located on the semiconductor substrate 31; through the first dielectric layer 33 and with the active The contact plug 34 electrically connected to the source region 32; the second dielectric layer 35 formed on the first dielectric layer 33; and the second dielectric layer 35 penetrating through and electrically connected to the contact plug 34 The metal layer 36.
[0055] In order to reduce contact resistance, the wafer also includes a metal silicide layer 37 formed in the active region 32, the contact plug 34 is electrically connected to the active region 32 through the metal silicide layer 37, the The metal silicide layer 37 can be made of cobalt silicide, titanium silicide or platinum silicide.
[0056] refer to Figure 6B , removing the metal layer 36 and the second dielectric layer 35 by means of chemical mech...
no. 3 example
[0063] refer to Figure 7A , first provide a wafer; the wafer includes: a semiconductor substrate 41 formed with an active region 42; a first dielectric layer 43 located on the semiconductor substrate 41; through the first dielectric layer 43 and with the active The contact plug 44 electrically connected to the source region 42; the second dielectric layer 45 formed on the first dielectric layer 43; and the second dielectric layer 45 penetrating through and electrically connected to the contact plug 44 The metal layer 46.
[0064] In order to reduce the contact resistance, the wafer may also include a doped region 47 formed in the active region 42, the contact plug 44 is partly located in the active region 42, and communicates with the doped region 47 through the doped region 47. The active region 42 is electrically connected, wherein the doped region 47 can be formed by ion implantation.
[0065] refer to Figure 7B , removing the metal layer 46 and the second dielectric l...
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