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multilayer chemical mechanical planarization pad

A chemical-mechanical, planarization technology, applied in abrasives, grinding tools, metal processing equipment, etc., to solve problems such as reducing substrate production yield, scratches, etc.

Active Publication Date: 2011-12-07
INNOPAD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, a relatively hard and rigid pad surface may also tend to cause scratch defects on the same substrate surface, thereby reducing the production yield of the polished substrate

Method used

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  • multilayer chemical mechanical planarization pad
  • multilayer chemical mechanical planarization pad
  • multilayer chemical mechanical planarization pad

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Embodiment Construction

[0015] The present invention relates to a polishing pad product and a method of making and using the polishing pad, which is especially suitable for performing chemical mechanical planarization on semiconductor wafer substrates where high flatness and low scratch defect are important chemical (CMP). Such as figure 2 As generally illustrated and described further below, the CMP pad 200 can comprise a first discrete phase or component 210 and a second continuous phase or component 220 such that the first component and the second component are as described herein Disclosed are combinations within the mat in varying ratios and configurations, wherein a first discrete phase or component 210 comprises two or more components, each of which exhibits a different water solubility, and a second continuous phase or component 220 Comprising a polymeric substance or a miscible mixture of two or more polymeric substances. Furthermore, when referring to a miscible mixture of two or more pol...

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Abstract

The present disclosure relates to a chemical mechanical planarization pad and a method of making and using a chemical mechanical planarization pad. The chemical mechanical planarization pad may include a first component including a water soluble composition and water insoluble composition exhibiting a solubility in water of less than that of the water soluble composition, wherein at least one of the water soluble and water insoluble compositions of the first component is formed of fibers. The chemical mechanical planarization pad may also include a second component, wherein the first component is present as a discrete phase in a continuous of the second component.

Description

[0001] Related application comparison [0002] This application claims the benefit of the filing date of US Provisional Application 61 / 142,544, filed January 5, 2009, which is hereby incorporated by reference in its entirety. technical field [0003] The present invention relates to polishing pads suitable for Chemical-Mechanical Planarization (CMP) of semiconductor wafers and other surfaces such as bare substrate silicon wafers, CRTs, flat panel display screens, and optical glass. Background technique [0004] In the polishing of semiconductor wafers, the emergence of very large scale integration (VLSI) circuits and very large scale integration (ULSI) circuits has enabled relatively more devices to be packaged in a semiconductor wafer. In smaller areas on the substrate, this may require higher planarity for the higher resolution lithography processes that may be required to achieve this high density packaging. In addition, as copper and other relatively soft metals and / or ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B24D3/20B24D3/34B24D7/04
CPCB24B37/22B24D3/20B24D3/34
Inventor P·利菲瑞A·马修吴光伟S·X·乔O·K·许D·A·韦尔斯J·E·奥迪伯M·C·金
Owner INNOPAD