Etching liquid for preparing texture surface of monocrystalline silicon solar cell
A solar cell and corrosion solution technology, applied in the directions of crystal growth, post-processing details, and post-processing, etc., can solve the problems of unsuitable industrial production, difficult control of the texturing process, and increased preparation steps, so as to achieve good stability and ensure the quality of the texture. Surface size and uniformity, effect of high boiling point
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Embodiment 1
[0023] An etching solution for preparing the textured surface of monocrystalline silicon solar cells, by weight, comprising:
[0024] (a) Sodium hydroxide: 2%;
[0025] (b) Sodium silicate: 4%;
[0026] (c) 1,3,5-cyclohexanetriol: 6%;
[0027] The balance is water.
[0028] First, add solute mass fraction of 2wt% NaOH and 4wt% NaSiO in the texturing tank 3 and solute mass fraction of 6wt% 1,3,5-cyclohexanetriol, heated and maintained at 98 ° C; Medium polishing to remove the damaged layer for 1min, cleaning with deionized water; finally putting it into the above-mentioned etching solution, the etching time is 9min, the quality difference of silicon wafer etching before and after texturing is 0.6g, continuous texturing 18 batches, all can get Texture with similar size and uniformity (for each piece of silicon wafer texturing, 1g of solid NaOH needs to be supplemented), and the corrosion solution of this system is equivalent to the single crystal texture prepared by the conv...
Embodiment 2
[0030] An etching solution for preparing the textured surface of monocrystalline silicon solar cells, by weight, comprising:
[0031] (a) Sodium hydroxide: 1.5%;
[0032] (b) Sodium silicate: 4.5%;
[0033] (c) 1,3,5-cyclohexanetriol: 5%;
[0034] (d) Alkyl synthetic alcohol alkoxylates: 0.1%;
[0035] The balance is water.
[0036] First, add 1.5wt% NaOH and 4.5wt% NaSiO in the texturing tank 3 and 1,3,5-cyclohexanetriol and alkyl synthetic alcohol alkoxylates (1,3,5-cyclohexanetriol and alkyl synthetic alcohol alkoxylates) with a solute mass fraction of 5wt% The volume ratio is 50:1), the temperature is heated and kept at 90°C; then a 156mm×156mm single crystal p-type silicon wafer is polished in a NaOH solution with a mass fraction of 20wt% to remove the damaged layer for 1min, and cleaned with deionized water; Finally put it into the texturing solution, the corrosion time is 12min, the mass difference of silicon wafers etched before and after texturing is 0.8g, contin...
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