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Method of Forming Fine Patterns

A fine pattern and pattern technology, applied in the field of forming fine patterns, can solve the problems of confinement, pattern size reduction of semiconductor devices, confinement of photoresist patterns, etc.

Inactive Publication Date: 2012-01-11
SK HYNIX INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, the limit of exposure resolution limits the magnitude of size reduction of photoresist patterns
Therefore, the reduction in the size of the pattern of the semiconductor device is limited

Method used

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  • Method of Forming Fine Patterns
  • Method of Forming Fine Patterns
  • Method of Forming Fine Patterns

Examples

Experimental program
Comparison scheme
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Embodiment Construction

[0015] Exemplary embodiments of the present specification are described in detail below with reference to the accompanying drawings. The accompanying drawings are provided to enable those of ordinary skill in the art to understand the scope of the embodiments of the present specification.

[0016] Figure 1A to Figure 1E is a cross-sectional view illustrating a method of forming a fine pattern according to an exemplary embodiment of the present specification.

[0017] refer to Figure 1A , the first auxiliary layer 3 and the second auxiliary layer 5 are stacked on the base layer 1 (ie, the layer to be etched).

[0018] The first auxiliary layer 3 and the second auxiliary layer 5 are preferably formed of a material including a photoacid generator (PAG) that can generate acid by exposure to light. In addition, preferably, layers 3 and 5 are formed of a material that can be removed in a developing process due to acid generated at an exposed portion. In addition, the second aux...

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PUM

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Abstract

A method of forming fine patterns comprises forming a first auxiliary layer having an acid diffusion rate on an underlying layer, forming a light-transmitting second auxiliary layer having a slower acid diffusion rate than the first auxiliary layer on the first auxiliary layer, exposing respective regions of the first and second auxiliary layers to generate acid in the exposed regions of the first and second auxiliary layers, diffusing the acid using a baking process so that diffusion of the acid is faster in the first auxiliary layer than in the second auxiliary layer, removing acid diffusion regions in the first and second auxiliary layers to form first and second auxiliary patterns, the second auxiliary pattern being wider width than the first auxiliary pattern, filling the removed regions of the first auxiliary layer with material for a hard mask, and removing the material for a hard mask exposed between the second auxiliary patterns to form hard mask patterns on sidewalls of the first auxiliary patterns.

Description

[0001] Cross References to Related Applications [0002] This application claims priority from Korean Patent Application No. 10-2010-0066488 filed on Jul. 9, 2010, the entire contents of which are incorporated herein by reference. technical field [0003] Exemplary embodiments of the present invention generally relate to methods of forming fine patterns of semiconductor devices, and more particularly, to a method of forming patterns each finer than an exposure resolution limit. Background technique [0004] Patterns for semiconductor devices are typically formed using photolithographic processes. The photolithography process is performed by exposing a photoresist layer formed on a base layer (ie, a layer to be etched) to light and developing the photoresist layer. A photoresist pattern is formed on the base layer through a photolithography process. [0005] The photoresist pattern is used as an etching mask when patterning a pattern of a semiconductor device. Therefore, t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/027H01L21/311
CPCH01L21/0274G03F7/094H01L21/0337G03F7/095H01L21/0338G03F7/40G03F7/2022
Inventor 金大祐
Owner SK HYNIX INC