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Manufacturing method for solid-state imaging device

A technology of a solid-state imaging device and a manufacturing method, which is applied in the direction of electric solid-state devices, radiation control devices, semiconductor devices, etc., and can solve problems such as the increase in the number of manufacturing steps

Inactive Publication Date: 2014-03-12
KK TOSHIBA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, in the case of manufacturing a solid-state imaging device having a plurality of microlenses whose heights are different from each other, there is a problem that the number of manufacturing steps increases compared with the case of manufacturing a solid-state imaging device having a plurality of microlenses of uniform height.

Method used

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  • Manufacturing method for solid-state imaging device
  • Manufacturing method for solid-state imaging device
  • Manufacturing method for solid-state imaging device

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no. 1 example

[0042] figure 1 It is a plan view showing the main part of the solid-state imaging device manufactured by the method of manufacturing the solid-state imaging device according to the first embodiment. In addition, figure 2 Is along figure 1 A cross-sectional view of the main part of the device in the dotted line X-X', image 3 Is along figure 1 A cross-sectional view of the main part of the device in the dotted line Y-Y'. In addition, R, G, and B shown in each figure respectively represent the transmission wavelength band of the color filter layer described below.

[0043] in figure 1 The solid-state imaging device shown in has a plurality of first microlenses 11 and a plurality of second microlenses 12. A plurality of first and second microlenses 11, 12 are in the color filter layer 16 ( figure 2 , image 3 ) Is formed in a lattice shape.

[0044] Color filter layer 16 ( figure 2 , image 3 ) Is composed of a plurality of blue color filter layers 13, a plurality of red color fi...

no. 2 example

[0100] Figure 16 It is a plan view showing the main part of the solid-state imaging device manufactured by the method of manufacturing the solid-state imaging device according to the second embodiment. In addition, Figure 17 Is along Figure 16 A cross-sectional view of the main part of the device in the dotted line X-X', Figure 18 Is along Figure 16 A cross-sectional view of the main part of the device in the dotted line Y-Y'. In addition, for the solid-state imaging device manufactured by the solid-state imaging device manufacturing method, only regions different from the solid-state imaging device manufactured by the solid-state imaging device manufacturing method of the first embodiment will be described, and the same regions are given the same symbols. And its description is omitted.

[0101] Figure 16 to Figure 18 The solid-state imaging device shown is with Figure 1 to Figure 3 Compared with the illustrated solid-state imaging device, the shape and size of the first ...

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Abstract

A manufacturing method for a solid-state imaging device according to an embodiment of the present invention includes a step of forming a transparent resin layer above a principal surface of a semiconductor substrate, a step of exposing the transparent resin layer to light by using a grating mask having a first transmission region and a second transmission region having a higher transmittance of the light than the first transmission region in mutually separate positions, a step of forming first resin patterns and second resin patterns lower than the first resin patterns in mutually separate positions, and a step of forming first microlenses and second microlenses lower than the first microlenses.

Description

[0001] Cross references to related applications [0002] This application is based on the prior Japanese Patent Application No. 2010-149618 filed on June 30, 2010 and claims priority, the entire contents of which are incorporated herein for reference. Technical field [0003] The present invention relates to a method of manufacturing a fixed imaging device. Background technique [0004] A conventional solid-state imaging device has: a plurality of photodiodes formed in a grid shape on a semiconductor substrate; a plurality of color filter layers formed on the photodiodes; and a plurality of microparticles formed on the color filter layers. lens. The photodiodes, color filter layers and microlenses form pixels. [0005] The color filter layers formed in each pixel are, for example, a red color filter layer that transmits light of red wavelength, a green color filter layer that transmits light of green wavelength, and a blue color filter layer that transmits light of blue wavelength. ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/146
CPCH01L27/1463H01L27/14621H01L27/14627H01L27/14685
Inventor 大武一
Owner KK TOSHIBA