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Method for establishing transient model of FS (Field Stop)-type IGBT (Insulated Gate Bipolar Transistor) switch

A technique for model building, switching transients, used in special data processing applications, instrumentation, electrical digital data processing, etc.

Active Publication Date: 2014-05-14
NAVAL UNIV OF ENG PLA
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, the practice of PT model ignoring the composite related items in formula (7) and formula (15) is also inconsistent with the actual situation for the FS model, which will bring a large error

Method used

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  • Method for establishing transient model of FS (Field Stop)-type IGBT (Insulated Gate Bipolar Transistor) switch
  • Method for establishing transient model of FS (Field Stop)-type IGBT (Insulated Gate Bipolar Transistor) switch
  • Method for establishing transient model of FS (Field Stop)-type IGBT (Insulated Gate Bipolar Transistor) switch

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Embodiment 1

[0083] The present embodiment provides a method for establishing a FS type IGBT switch transient model, comprising the following steps:

[0084] (A) Establish a model analysis coordinate system based on the physical structure of the FS type IGBT. The abscissa of the coordinate system represents the thickness of each layer structure, and the ordinate represents the concentration distribution of internal holes;

[0085] In the coordinate system, the internal transistor P+ emitter and the P+ emitter / N+ junction edge of the FS layer are set as the coordinate origin x of the FS layer * =0; FS layer width is W H ; The junction of the FS layer and the base area is set as the coordinate origin of the base area x=0, x * =x+W H ;W L is the base width, W LB is the width of the metallurgical base.

[0086] (B) According to the structural parameters of the IGBT base area, the hole continuity equation and the current bipolar transport equation of the base area are obtained by adopting ...

Embodiment 2

[0206] In this embodiment, on the basis of Embodiment 1, in the step (B), when calculating the hole current in the base region, the influence of hole recombination in the base region is considered, and the first item on the right side of the equation (7) remains , and the corresponding third term on the right side of the equation (15), the expression of the hole current flowing into and out of the base region is obtained.

[0207] According to Example 1, formula (7) is the continuity equation for the distribution of excess holes in the base region. Generally, the hole lifetime τ of PT-type IGBT is relatively large, and its bipolar diffusion length It is also relatively large, generally L>>W(t), so when the PT modeling method is used, the first item on the right side of formula (7) is omitted when the effect of hole recombination is not considered, so formula (15) etc. The third item to the right of the sign is also omitted. And the excess hole lifetime τ in the base region o...

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Abstract

The invention discloses a method for establishing a transient model of an FS (Field Stop)-type IGBT (Insulated Gate Bipolar Transistor) switch. In the method, a transient simulation model of a novel FS-type IGBT switch is established by adopting some new model methods and postulated conditions; and in the model, according to the structural characteristics and the working mechanism of an FS-type IGBT, a large injection postulation and a bipolar transport equation are adopted in an FS layer, and simultaneously, the influence of hole recombination is also taken into consideration. The transient model of the FS-type IGBT switch, obtained in the invention, has higher accuracy that that of a traditional model and can better meet the requirement for transient and accurate simulation of the FS-structured IGBT switch.

Description

technical field [0001] The invention relates to a method for establishing a model, in particular to a method for establishing a switching transient model suitable for a novel field stop (Field Stop, FS for short) structure IGBT (Insulated Gate Bipolar Transistor). Background technique [0002] Insulated gate bipolar transistor (IGBT) is a composite device that combines power field effect transistor (MOSFET) and bipolar power transistor (Bipolar Junction Transistor—BJT) structure. It has both simple driving and low loss , can withstand high voltage and high current, and has good thermal stability. Since its appearance in the 1980s, it has been widely used in various medium and high-power power electronic devices. It is the most widely used full-control type at present. Power Electronics. [0003] The simulation model is an important tool to guide the design, manufacture and actual engineering application of IGBT: the accurate simulation model can provide accurate and quantit...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G06F17/50
Inventor 唐勇孙驰胡安陈明汪波肖飞刘宾礼揭桂生
Owner NAVAL UNIV OF ENG PLA
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