Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Resistance-string multiplexing circuit structure of SAR ADC (successive approximation analog to digital converter)

A digital-to-analog converter and successive approximation technology, applied in the directions of analog/digital conversion, analog/digital conversion calibration/test, code conversion, etc., can solve the problems of chip area consumption and power consumption

Inactive Publication Date: 2012-01-18
UNIV OF ELECTRONICS SCI & TECH OF CHINA
View PDF4 Cites 31 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The existence of these three resistor strings will not only consume a lot of power consumption, but also consume a lot of chip area

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Resistance-string multiplexing circuit structure of SAR ADC (successive approximation analog to digital converter)
  • Resistance-string multiplexing circuit structure of SAR ADC (successive approximation analog to digital converter)
  • Resistance-string multiplexing circuit structure of SAR ADC (successive approximation analog to digital converter)

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0019] Below in conjunction with accompanying drawing, provide the specific implementation example of the present invention. It should be noted that: the parameters in the implementation examples do not affect the generality of the present invention. Assuming that the SAR ADC in the example has 12-bit resolution, the main digital-to-analog converter MDAC has a capacitive 5-bit high, the middle 3-bit is resistive, and the lowest 4-bit is capacitive; the self-calibrating digital-to-analog converter CDAC has 9 bits The resolution is composed of high 4-bit resistive type and low 5-bit capacitive type.

[0020] Figure 5 It is a structural diagram of a successive approximation digital-to-analog converter with self-calibration function, including six parts: a main digital-to-analog converter (MDAC) 501; a 12-bit successive approximation register (12-bit SAR) 502; a comparator 503; a Logic control module 504; a self-calibration circuit 505; a reference voltage generation circuit 50...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a resistance-string multiplexing circuit structure of an SAR ADC (successive approximation analog to digital converter), and in particular relates to an SAR ADC circuit structure capable of reducing the cost and the power consumption, belonging to analog to digital conversion technologies. The structure comprises an MDAC (main digital to analog converter) (403), a CDAC (calibration digital to analog converter) (4041), a reference voltage generation circuit (401) and a resistance string (402), wherein the MDAC (403) is formed by mixing a capacitance DAC with a resistance DAC; the CDAC (4041) is formed by mixing a capacitance DAC with a resistance DAC; and an input stage of the reference voltage generation circuit (401) generates band-gap reference voltages in accordance with a band-gap voltage generation circuit, and an output stage of the reference voltage generation circuit (401) generates reference voltages (Vref) and reference voltages (Vcm) which are half of the reference voltages (Vref) based on a voltage regulator. The MDAC (403), the CDAC (4041) and the reference voltage generation circuit (401) in the SAR ADC structure multiplex the resistance string (402), so that the chip area can be reduced, and the power consumption can be decreased.

Description

technical field [0001] The invention belongs to the technical field of analog-to-digital conversion, and in particular relates to a successive approximation digital-to-analog converter circuit structure capable of reducing cost and power consumption. Background technique [0002] With the continuous development of digital technology and communication technology, the requirements for an analog-to-digital converter (Analog-to-Digital Converter, ADC) are getting higher and higher. The role of the ADC is to convert continuous voltage signals into digital codes, and its performance requirements are mainly high speed, high resolution and low power consumption. There are many types of ADCs, among which the successive approximation analog-to-digital converter (Successive Approximation Register ADC, SAR ADC) is widely used with medium speed, medium resolution, low cost and low power consumption, and is used in wireless Sensor networks, biomedical instruments, resistive touch screens...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H03M1/10H03M1/38
Inventor 宁宁关允超张军杜翎于奇王向展
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com