Controlled silicon structure with adjustable maintaining voltage

Abstract

The invention discloses a controlled silicon structure with an adjustable maintaining voltage. The structure comprises a first N-type well, a second N-type well, a first P-type well, a second P-type well, a first P+ doped region and a first N+ doped region, wherein the first N-type well is connected with the first P-type well through the second N-type well and the second P-type well in turn. The controlled silicon structure with the adjustable maintaining voltage is manufactured on a silicon-on-insulator (SOI) silicon chip, and the aim of changing the maintaining voltage is fulfilled by reducing the thicknesses of channel regions of the second N-type well and the second P-type well and further changing the lengths of the channel regions of the second N-type well and / or the second P-type well of the controlled silicon structure; and the controlled silicon structure can be combined with a serial diode technology, so that the requirement of various working voltages on the maintaining voltage of a controlled silicon electrostatic protection structure is further met.

Description

technical field [0001] The invention relates to an electrostatic discharge protection circuit, in particular to a thyristor structure with adjustable maintaining voltage. Background technique [0002] Electro Static Discharge (ESD) protection capability is one of the important reliability indicators of integrated circuits. With the reduction of key dimensions, the working voltage of the core circuit is getting smaller and smaller. For example, the working voltage of the 0.18um process is 1.8V, and the working voltage of the 0.13um process is 1.5V. further decrease. In order to obtain a sufficiently low protection voltage, a large number of SCR thyristor structures are currently used for electrostatic protection of integrated circuits. In order to prevent the SCR from falsely triggering the latch-up effect during operation, a common method is to connect a diode in series or increase the trigger current, and prevent the SCR structure from triggering through a high maintenan...

AI Technical Summary

Problems solved by technology

[0003] The object of the present invention is to solve the problem that the maintenance voltage is difficult to adjust accurately in the existing integrated circuits, and provides a thyristor structure with adjustable maintenance voltage, including: a first N-type well, a second N-type well, a first P-type well, a second P-type well, a first P+ doped region and a first N+ doped region;

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