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Semiconductor structure and manufacturing method thereof

A manufacturing method and semiconductor technology, which are applied in the fields of semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as the influence of the gate control capability of the device and the difficulty of removing the silicon oxide layer, and achieve the effect of improving electrical performance.

Active Publication Date: 2012-02-08
SOI MICRO CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When etching the silicon oxide layer, it is difficult to remove the silicon oxide layer on both sides of the fin, which has a great impact on the gate control capability of the device

Method used

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  • Semiconductor structure and manufacturing method thereof
  • Semiconductor structure and manufacturing method thereof
  • Semiconductor structure and manufacturing method thereof

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Embodiment Construction

[0025] In the process of forming fin field effect transistors in the existing process, a silicon oxide layer is formed on the surface of the semiconductor substrate by thermal oxidation to isolate the device and the semiconductor substrate; since silicon is usually used as the semiconductor substrate, the fin It is also made of silicon-containing materials, so during the thermal oxidation process, a silicon oxide layer will also be formed on both sides and the surface of the fin, and its thickness is consistent with the silicon oxide layer on the surface of the semiconductor substrate. When etching the silicon oxide layer, it is difficult to remove the silicon oxide layer on both sides of the fin, which has a great impact on the gate control capability of the device.

[0026] The invention can remove the oxide layer on both sides of the fin while reserving an oxide layer with an appropriate thickness on the surface of the semiconductor substrate and the top of the fin for isola...

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Abstract

The invention relates to a semiconductor structure and a manufacturing method thereof. The manufacturing method comprises the following steps: providing a semiconductor substrate; forming a fin on the semiconductor substrate; respectively injecting fluorinions into the surface of the semiconductor substrate and the top part of the fin; respectively forming oxide layers on the surface of the semiconductor substrate and the surface of the fin, wherein the thickness of the oxide layer on the semiconductor substrate at both sides of the fin and the thickness of the oxide layer at the top part of the fin are much greater than that of the oxide layers at both sides of the fin; and etching to remove the oxide layers at both sides of the fin. The semiconductor structure is capable of completely removing the silicon oxide layers at both sides of the fin, thus, the electrical property of a transistor is improved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a semiconductor structure and a manufacturing method thereof. The semiconductor structure relates to a Fin Field Effect Transistor (FinFET). Background technique [0002] With the continuous advancement of integrated circuits, that is, IC technology, the number of components integrated on the same chip has evolved from the initial tens of hundreds to the present millions. The performance and complexity of current ICs are far beyond what could have been imagined at the beginning. In order to meet the requirements of complexity and circuit density (ie: the number of devices integrated into a certain area), the minimum feature size, which is known as the "geometric line width" of the device, is getting smaller and smaller with the innovation of process technology. Today, the minimum line width of MOS transistors is less than 65 nanometers. [0003] As the size of transis...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/06H01L21/336H01L29/78
Inventor 刘佳骆志炯王鹤飞
Owner SOI MICRO CO LTD