Single event upset resistant settable scanning structure D trigger

Abstract

The invention discloses a single event upset resistant settable scanning structure D trigger, and aims to improve the single event upset resistance of the single event upset resistant settable scanning structure D trigger. The trigger consists of a clock circuit, a scanning control buffer circuit, a master latch, a slave latch and an output buffer circuit; the master latch consists of eighteen P-channel metal oxide semiconductor (PMOS) tubes and eighteen N-channel metal oxide semiconductor (NMOS) tubes; the slave latch consists of twelve PMOS tubes and twelve NMOS tubes; both the master latchand the slave latch are subjected to dual-mode redundancy reinforcement; and C2MOS circuits in the master latch and the slave latch are improved, namely separated into pull-up circuits and pull-down circuits in mutually redundant C2MOS circuits. The single event upset resistant synchronously-settable scanning structure D trigger has strong single event upset resistance, is suitable for a standardcell library of a single event upset resistant reinforcing integrated circuit, and is applied in the fields of aviation, spaceflight and the like.

Description

technical field [0001] The invention relates to a master-slave D flip-flop with a setting structure and a scanning structure, in particular to a D flip-flop with a scanning structure which can be set against a single event upset (signal event upset). Background technique [0002] In the universe, there are a large number of high-energy particles (protons, electrons, heavy ions) and charged particles. After the integrated circuit is bombarded by these high-energy particles and charged particles, an electronic pulse will be generated in the integrated circuit, which may cause the original level of the internal node of the integrated circuit to flip. This effect is called single event upset (SEU). The higher the LET (Linear Energy Transfer) value of a single event bombarding an IC, the stronger the resulting electron pulse. Integrated circuits used in aviation and aerospace fields are threatened by single event upsets, which can make integrated circuits work unstable and even ...

AI Technical Summary

Problems solved by technology

[0009] The technical problem to be solved by the present invention is to propose a scanning structure D flip-flop capable of setting anti-single event flip-flops in view of the problem that the anti-single event flip-flop can set the scan structure D flip-flop with low anti-single event flip-flop ability , it can work normally under single-event bombardment with higher LET values ​​without single-event flipping

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