High-voltage LED device and manufacturing method thereof

A technology of LED devices and manufacturing methods, applied in the direction of electric solid-state devices, semiconductor devices, electrical components, etc., can solve the problems of high cost of high-voltage LED devices, poor interconnection performance, etc., achieve simple manufacturing steps, save metal deposition and cleaning procedures, The effect of improving interconnection reliability

Inactive Publication Date: 2012-03-07
ENRAYTEK OPTOELECTRONICS
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, there are still considerable barriers in the actual implementation process, and it is urgent to introduce new methods that can effectively improve the above defects to solve the problem of high cost and poor interconnection performance of high-voltage LED devices faced by the third-generation semiconductor materials.

Method used

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  • High-voltage LED device and manufacturing method thereof
  • High-voltage LED device and manufacturing method thereof
  • High-voltage LED device and manufacturing method thereof

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Embodiment Construction

[0017] In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0018] In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. However, the present invention can be implemented in many other ways different from those described here, and those skilled in the art can make similar extensions without violating the connotation of the present invention, so the present invention is not limited by the specific implementations disclosed below.

[0019] Secondly, the present invention is described in detail using schematic diagrams. When describing the embodiments of the present invention in detail, for the convenience of explanation, the cross-sectional view showing the device structure will not be partially enlarged accordi...

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Abstract

The invention provides a manufacturing method of a high-voltage LED device. The manufacturing method comprises the following steps of: providing a substrate and forming an N-type limiting layer, an epitaxial layer and a P-type contact electrode layer on the substrate in sequence; manufacturing at least one isolation trench, and manufacturing an N-type contact electrode step in each region isolated from the upper side of the substrate; depositing an isolated dielectric layer; and removing a part of isolated dielectric layer closely adjacent to each isolation trench, depositing metal on a part of P-type contact electrode layer and a part of N-type limiting layer which are synchronously exposed, in the isolation trench and on the surface of the isolation trench, and manufacturing N electrodes, P electrodes and interconnected metal layers used for connecting adjacent LED electrodes in one step so as to form a plurality of interconnected LEDs. The invention also provides the high-voltage LED device, and aims at solving the problems on reducing the manufacturing cost of the LED device and improving the interconnected performance.

Description

technical field [0001] The invention belongs to the field of light-emitting device manufacturing, and in particular relates to a high-voltage LED device and a manufacturing method thereof. Background technique [0002] Due to the rapid development of semiconductor integration technology, light emitting diodes (Light Emitting Diodes, LEDs) made of III-nitrides are more and more widely used. With the upgrading of LED applications and the market's demand for LEDs, LEDs are developing in the direction of high power and high brightness. [0003] At present, the high voltage LED (High Voltage LED, HV LED) prepared by the semiconductor integration process can greatly reduce the input-output voltage difference of the DC-DC step-down circuit, further improve the efficiency of the LED drive power supply, and effectively reduce the impact of the LED lamp on the The requirements of the heat dissipation shell, thereby reducing the overall cost of LED lamps. For example, if you want to ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01L27/15H01L33/36
CPCH01L2224/24137H01L2224/48091
Inventor 肖德元张汝京程蒙召
Owner ENRAYTEK OPTOELECTRONICS
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